Publication List of Vladimir A. Gritsenko

269 Andrei Gismatulin, Danila Odintsov; Inna Shundrina; Irina Os’kina; Ivan Azarov; Leonid Shundrin; Vladimir Gritsenko, Charge transport mechanism and trap origin in methyl methacrylate copolymer with thioxanthenone side groups, Chemical Physics Letters, 2024 Will be published

268 Timofey Perevalov, Damir Islamov, Timur Zalyalov, Andrei Gismatulin, Vladimir Golyashov, Oleg Tereshchenko, Dmitry Gorshkov, V. Gritsenko, Electron and hole bipolar injection in magnesium oxide films, Appl. Phys. Lett. V. 124, p. 042903 (2024); doi: 10.1063/5.01808272023

267 Д. Р. Исламов a,b* , Т. В. Перевалов a, А. А. Гисматулин a, И. А. Азаров a, Е. В. Спесивцев a, В. А. Гриценко, МЕХАНИЗМ ПОПЕРЕЧНОГО ТРАНСПОРТА ЗАРЯДА В ТОНКИХ ПЛЕНКАХ ГЕКСАГОНАЛЬНОГО НИТРИДА БОРА, ЖЭТФ, 2023, том 163, вып. 3, стр. 392–400

267. D. R. Islamova, T. V. Perevalov, A. A. Gismatulin, I. A. Azarov, E. V. Spesivtsev, and V. A. Gritsenko, Mechanism of Transverse Charge Transfer in Thin Films of Hexagonal Boron Nitride

266 Perevalov, Timofey; Gismatulin, Andrei; Prosvirin, Igor; Pustovarov, Vladimir; Gritsenko, Vladimir "Oxygen vacancies as a trap responsible for the La-doped Hf0.5Zr0.5O2 charge transport, The Journal of Physical Chemistry Part C, v. 127, p 14883-14890, 2023

265 Yu.N. Novikov, A.A. Gismatulin, V.A. Gritsenko, B. Hallac and Y. Roizin, Charge transport in amorphous alumina films fabricated in an industrial ALD tool Thin Solid Films, v. 781, p.140004, 2023

264 Yu.N. Novikov, G.N Kamaev, I.P. Prosvirin, V.A. Gritsenko, Memory properties and short-range order in silicon oxynitride- based memristors, Appl. Phys. Lett. 122, 232903 (2023); DOI: 10.1063/5.0151211

263 В.А. Володин, Г.Н. Камаев, В.А. Гриценко, С.Г. Черкова, И.П. Просвирин, Состав и оптические свойства аморфного оксинитрида кремния переменного состава a SiOxNy:H", Журнал технической физики, n.90, N3, p 575-582, 2023 DOI: 10.21883/JTF.2023.04.55047.167-22

263 V.A. Volodin, G.N. Kamaev, V.A. Gritsenko, S.G. Cherkova, I.P. Prosvirin, Composition and optical properties of amorphous silicon oxynitride of different composition, Technical Physics, Vol. 68, No. 4 p.538-545, 2023

262 Andrei A. Gismatulin, Gennadiy N. Kamaev, Vladimir A. Volodin, Vladimir A. Gritsenko, Charge transport mechanism in the forming-free memristor based on PECVD silicon oxynitride, Electronics, 2023, 12, 598. https://doi.org/10.3390/electronics12030598

261. Yu.N. Novikov, A.A. Gismatulin, I.P. Prosvirin, P.G. Bobovnikov, G.Ya. Krasnikov, V.A. Gritsenko, Short-range order and charge transport in silicon-rich pyrolytic silicon oxynitride, Journal of Non-Crystalline Solids, V. 599, p. 121984, 2023, https://doi.org/10.1016/j.jnoncrysol.2022.121984

260. Д.С. Одинцов, И.К. Шундрина, А.А. Гисматулин, И.А. Азаров, Р.В. Андреев, В.А. Гриценко, Л.А. Шундрин, ТЕРМОСТОЙКИЕ ПОЛИИМИДЫ С ЭЛЕКТРОНОАКЦЕПТОРНЫМИ ПЕНДАНТНЫМИ ГРУППАМИ ТИОКСАНТЕНОНОВОГО РЯДА ДЛЯ ЗАПОМИНАЮЩИХ УСТРОЙСТВ РЕЗИСТИВНОГО ТИПА С МАЛЫМ НАПРЯЖЕНИЕМ ПЕРЕКЛЮЧЕНИЙ, Журнал структурной химии, т. 63, № 11, 101782, 2022

259. Т.В. Перевалов, Е.В. Спесивцев, С.В. Рыхлицкий, П.Г. Бобовников, Г.Я. Красников, В.А. Гриценко, Оптические свойства пиролитического нитрида кремния SiN_x , обогащённого кремнием, Оптика и спектроскопия, том 130, вып. 11 с. 1718-1722, 2022.

258. T.V. Perevalov, V.A. Volodin, G.N. Kamaev, A.A. Gismatulin, S.G. Cherkova, I.P. Prosvirin, K.N. Astankova, V.A. Gritsenko, Electronic structure of silicon oxynitride films grown by plasma-enhanced chemical vapor deposition for memristor application. Journal of Non-Crystalline Solids, v.598, p. 121925(1-8), (2022). DOI: https://doi.org/10.1016/j.jnoncrysol.2022.121925,

257. Т.В. Перевалов, В.А. Гриценко, А.В. Бухтияров, И.П. Просвирин, Электронная структура дефектов вакансионного типа в гексагональном нитриде бора, Физика твердого тела, том 64, вып. 7, c. 787-793, 2022, DOI 10.21883/FTT.2022.07.52562.308

256. Yu. N. Novikov V.A. Gritsenko Multiphonon trap ionization mechanism in amorphous SiN_x, Journal of Non-Crystalline Solids V, 582, p. 121442 2022, https://doi.org/10.1016/j.jnoncrysol.2022.121442

255. Р. М. Х. Исхакзай , В. Н. Кручинин , В. Ш. Алиев , В. А. Гриценко , Е. В. Дементьева , М. В. Заморянская, ТРАНСПОРТ ЗАРЯДА В НЕСТЕХИОМЕТРИЧЕСКОМ SIO_X, ПОЛУЧЕННОМ ОБРАБОТКОЙ ТЕРМИЧЕСКОГО SIO₂ В ВОДОРОДНОЙ ПЛАЗМЕ ЭЛЕКТРОННО-ЦИКЛОТРОННОГО РЕЗОНАНСА, Микроэлектроника, T. 51, № 1, стр. 28-40, 2022, DOI: 10.31857/S0544126921060089

254. T. V. Perevalov, R. M. Kh. Iskhakzaia, I. P. Prosvirin , V. Sh. Aliev,and V. A. Gritsenko, Forming-Free Memristors Based on Hafnium Oxide Processed in Electron Cyclotron Resonance Hydrogen Plasma, JETP Letters, 2022, Vol. 115, No. 2, pp. 79–83 DOI: 10.1134/S0021364022020084

253. T. V. Perevalov,  · A. A. Gismatulin, V. A. Gritsenko,· H. Xu, · J. Zhang,  · K. A. Vorotilov,  · M. R. Baklanov, Charge transport mechanism in a PECVD deposited low-k SiOCH dielectric, Journal of Electronic Materials, v. 51, p. 2521–2527, 2022. DOI https://doi.org/10.1007/s11664-021-09411-8

252. Te Jui Yen, Albert Chin, Weng Kent Chan, Hsin-Yi Tiffany Chen, Vladimir Gritsenko, Remarkably High-Performance Nanosheet GeSn Thin-Film Transistor, Nanomaterials, Nanomaterials, 12(2), 26, 2022, DOI:10.3390/nano12020261

251. Ilya Weinstein, Artem Shilov; Sergey Savchenko; Alexander Vokhmintsev, Vladimir Gritsenko, Thermal quenching of self-trapped exciton luminescence in nanostructured hafnia, Journal of Luminescence, V 247, p. 118908, 2022. https://doi.org/10.1016/j.jlumin.2022.118908

250. Кручинин В.Н., Спесивцев Е.В., Рыхлицкий С.В., Гриценко В.А., Mehmood F., Mikolajick T., Schroeder U, Оптические свойства сегнетоэлектрических пленок Hf_xZr_yO₂ и La : Hf_xZr_yO₂ по данным эллипсометрии, Оптика и Спектроскопия, вып 3, с 365-368, 2022, DOI 10.21883/OS.2022.03.52163.2477-21

249. Т. В. Перевалов, Р. М. Х. Исхакзай, И. П. Просвирин, В. Ш. Алиев, В. А. Гриценко, Бесформовочные мемристоры на основе оксида гафния, обработанного в водородной плазме электрон-циклотронного резонанса, Письма в ЖЭТФ, том 115, вып. 2, с. 89 – 93 2022, DOI: 10.31857/S1234567822020045

T. V. Perevalov, R. M. Kh. Iskhakzai, I. P. Prosvirin, V. Sh. Aliev, c, and V. A. Gritsenko, Forming-Free Memristors Based on Hafnium Oxide Processed in Electron Cyclotron Resonance Hydrogen Plasma, JETP Letters, 2022, Vol. 115, No. 2, pp. 79–83. JETP Letters, 2022, Vol. 115, No. 2, pp. 79–83. DOI: 10.1134/S0021364022020084

248. В.А. Пустоваров, В.А. Гриценко, Д.Р Исламов. Люминесценция тонких пленок Hf_xZr_1-xO₂  при возбуждении синхротронным излучением вакуумного ультрафиолетового диапазона, Физика твердого тела,  вып. 7, с. 823-829, 2022 DOI: 10.21883/FTT.2022.07.52567.305

247. Т.В. Перевалов, В.А. Гриценко, А.В. Бухтияров, И.П. Просвирин, Электронная структура дефектов вакансионного типа в гексагональном нитриде бора, Физика твердого тела, том 64, вып. 7, c. 787-793, 2022, DOI 10.21883/FTT.2022.07.52562.308

246. Р. М. Х. Исхакзай , В. Н. Кручинин , В. Ш. Алиев , В. А. Гриценко , Е. В. Дементьева , М. В. Заморянская, ТРАНСПОРТ ЗАРЯДА В НЕСТЕХИОМЕТРИЧЕСКОМ SIOX, ПОЛУЧЕННОМ ОБРАБОТКОЙ ТЕРМИЧЕСКОГО SIO₂ В ВОДОРОДНОЙ ПЛАЗМЕ ЭЛЕКТРОННО-ЦИКЛОТРОННОГО РЕЗОНАНСА, Микроэлектроника, T. 51, № 1, стр. 28-40, 2022, DOI: 10.31857/S0544126921060089

R. M. Kh. Iskhakzay, V. N. Kruchinin, V. Sh. Aliev, c, V. A. Gritsenko, E. V. Dementieva, and M. V. Zamoryanskaya, Charge Transport in Nonstoichiometric SiOx Obtained by Treatment of Thermal SiO2 in Hydrogen Plasma of Electronic-Cyclotron Resonance, Russian Microelectronics, Vol. 51, No. 1, pp. 24–35, 2022. DOI: 10.1134/S1063739721060081

245. T. V. Perevalov,  · A. A. Gismatulin, V. A. Gritsenko,· H. Xu, · J. Zhang,  · K. A. Vorotilov,  · M. R. Baklanov, Charge transport mechanism in a PECVD deposited low-k SiOCH dielectric, Journal of Electronic Materials, v. 51, p. 2521–2527, 2022. DOI https://doi.org/10.1007/s11664-021-09411-8

244. Ilya Weinstein, Artem Shilov; Sergey Savchenko; Alexander Vokhmintsev, Vladimir Gritsenko, Thermal quenching of self-trapped exciton luminescence in nanostructured hafnia, Journal of Luminescence, V 247, p. 118908, 2022. https://doi.org/10.1016/j.jlumin.2022.118908

243. Кручинин В.Н., Спесивцев Е.В., Рыхлицкий С.В., Гриценко В.А., Mehmood F., Mikolajick T., Schroeder U, Оптические свойства сегнетоэлектрических пленок Hf_xZr_yO₂ и La : Hf_xZr_yO₂ по данным эллипсометрии, Оптика и Спектроскопия, вып 3, с 365-368, 2022, DOI 10.21883/OS.2022.03.52163.2477-21

242. Т. В. Перевалов, Р. М. Х. Исхакзай, И. П. Просвирин, В. Ш. Алиев, В. А. Гриценко, Бесформовочные мемристоры на основе оксида гафния, обработанного в водородной плазме электрон-циклотронного резонанса, Письма в ЖЭТФ, том 115, вып. 2, с. 89 – 93 2022, DOI: 10.31857/S1234567822020045

T. V. Perevalov, R. M. Kh. Iskhakzai, I. P. Prosvirin, V. Sh. Aliev, c, and V. A. Gritsenko, Forming-Free Memristors Based on Hafnium Oxide Processed in Electron Cyclotron Resonance Hydrogen Plasma, JETP Letters, 2022, Vol. 115, No. 2, pp. 79–83. JETP Letters, 2022, Vol. 115, No. 2, pp. 79–83. DOI: 10.1134/S0021364022020084

241. В. А. Гриценко, А. А. Гисматулин, О. М. Орлов, ЗАПОМИНАЮЩИЕ СВОЙСТВА МЕМРИСТОРОВ НА ОСНОВЕ ОКСИДА И НИТРИДА КРЕМНИЯ, Pоссийские нанотехнологии, том 16, № 6, с. 751–760, 2021,

V. A. Gritsenko, A. A. Gismatulin, and O. M. Orlov, Memory Properties of SiOx- and SiNx-Based Memristors, Nanobiotechnology Reports, 2021, Vol. 16, No. 6, pp. 722–731 DOI: 10.1134/S2635167621060070

240. В.Н. Кручинин, Д.С. Одинцов, Л.А. Шундрин, И.К. Шундрина, С.В. Рыхлицкий,Е.В. Спесивцев, В.А. Гриценко, Оптические и электрохромные свойства тонких пленок амбиполяных полиимидов с пендантными группами на основе производных тоиксантенона, Оптика и спектроскопия, том 129, вып. 11 c 1393-1399 2021

239. Ю. Н. Новиков, В. А. Гриценко, ТРАНСПОРТ ЗАРЯДА В АМОРФНОМ НИТРИДЕ КРЕМНИЯ, ЖЭТФ, 2021, том 160, вып. 4 (10), стр. 565-571

Yu. N. Novikov, and V. A. Gritsenko, Charge Transport in Amorphous Silicon Nitride, Journal of Experimental and Theoretical Physics, Vol. 133, No. 4, pp. 488–493, 2021.

238. Новиков Ю.Н., Гриценко В.А., Многофононная ионизация глубоких центров в аморфном нитриде бора, Письма в Журнал экспериментальной и теоретической физики, т. 114, №7, стр. 498-501, 2021

Yu. N. Novikov, and V. A. Gritsenko, Multiphonon Ionization of Deep Centers in Amorphous Boron Nitride, JETP Letters, Vol. 114, No. 7, pp. 433–436, 2021 DOI: 10.1134/S0021364021190097

237. Timofey V. Perevalov, Andrei A. Gismatulin, Vladimir A. Gritsenko, Igor’ P. Prosvirin, Furqan Mehmood, Thomas Mikolajick, and Uwe Schroeder, Bipolar conductivity in ferroelectric La:HfZrO films, Appl. Phys. Lett. 118, 262903 (2021); doi: 10.1063/5.0050748

236. Timofey V. Perevalov, Igor P. Prosvirin, Evgenii A. Suprun, Furqan Mehmood, Thomas Mikolajick, Uwe Schroeder, Vladimir A. Gritsenko, The atomic and electronic structure of Hf0.5Zr0.5O2 and Hf0.5Zr0.5O2:La films, JOURNAL OF SCIENCE-ADVANCED MATERIALS AND DEVICES, 2021, т. 6, стр. 595-600

235. Te-Jui Yen, Albert Chin, and Vladimir Gritsenko, Improved Device Distribution in High-Performance SiNx Resistive Random Access Memory via Arsenic Ion Implantation, Nanomaterials 2021, 11, 1401. https://doi.org/10.3390/nano11061401

234. V.N. Kruchinin, , V.A.Volodin, S.V. Rykhlitskii, V.A. Gritsenko, I.P. Posvirin, Xiaoping Shi, and Mikhail R. Baklanov, Atomic structure and optical properties of plasma enhanced chemical vapor deposited SiCOH low-k dielectric film, Оптика и Спектроскопия Вып. 5, Стр. 618, 2021

233. Te Jui Yen , Albert Chin, and Vladimir Gritsenko, Exceedingly High Performance Top-Gate P-Type SnO Thin FilmTransistor with a Nanometer Scale Channel Layer, Nanomaterials 11, 92. 2021, https://doi.org/10.3390/nano11010092

232. AndreiA. Gismatulin, Gennadiy N. Kamaev, Vladimir N. Kruchinin, VladimirA. Gritsenko, Oleg M. Orlov, & Albert Chin, Charge transport mechanism in the forming free memristor based on silicon nitride, Scientifc Reports | (2021) 11:2417 | https://doi.org/10.1038/s41598-021-82159-7

231. Andrei A Gismatulin, Vitalii A Voronkovskii, Gennadiy N Kamaev, Yuriy N Novikov, Vladimir N Kruchinin, Grigory K Krivyakin, Vladimir A Gritsenko, Igor P Prosvirin and Albert Chin, Electronic structure and charge transport mechanism in a forming-free SiOx-based memristor, Nanotechnology 31 (2020) 505704

230. Damir R. Islamov, Vladimir A. Gritsenko, Timofey V. Perevalov, Vladimir Sh. Aliev, Vladimir A. Nadolinny, Albert Chin, Oxygen vacancies in zirconium oxide as the blue luminescence centres and traps responsible for charge transport: Part II-FilmsMaterialia 15 (2021) 100980

229. Damir R. Islamov, Vladimir A. Gritsenko, Timofey V. Perevalov, Alexander P. Yelisseyev , Vladimir A. Pustovarov, Ilya V. Korolkov, Elena E. Lomonova, Oxygen vacancies in zirconium oxide as the blue luminescence centres and traps responsible for charge transport: Part I—Crystals, Materialia 15 (2021) 100979

228. V. N. Kruchinina, *, T. V. Perevalova, b , V. Sh. Alieva, d , R. M. Kh. Iskhakzaia , E. V. Spesivtseva, V. A. Gritsenkoa, b , and V. A. Pustovarovc, Optical Properties of the SiO_x (x < 2) Thin Films Obtained by Hydrogen Plasma Processing of Thermal Silicon Dioxide, Optics and Spectroscopy, 2020, Vol. 128, No. 10, pp. 1577–1582

В.Н. Кручинин, Т.В. Перевалов, В.Ш. Алиев, Р.М.Х. Исхакзай, Е.В. Спесивцев, В.А. Гриценко, В.А. Пустоваров, Оптические свойства тонких пленок SiO_x (x < 2), полученных обработкой термического диоксида кремния в водородной плазме, Оптика и спектроскопия, 2020, том 128, вып. 10

227. O. M. Orlov, A. A. Gismatulin, V. A. Gritsenko, and D. S. Mizginov, Charge Transport Mechanism in a Formless Memristor Based on Silicon Nitride, Russian Microelectronics, 2020, Vol. 49, No. 5, pp. 372–377

О. М. Орлова, А. А. Гисматулин, В. А. Гриценко,, Д. С. Мизгинов, МЕХАНИЗМ ТРАНСПОРТА ЗАРЯДА В БЕСФОРМОВОЧНОМ МЕМРИСТОРЕ НА ОСНОВЕ НИТРИДА КРЕМНИЯ, МИКРОЭЛЕКТРОНИКА, 2020, том 49, № 5, с. 1–7

226. T. V. Perevalov, R. M. Kh. Iskhakzai , V. Sh. Aliev, V. A. Gritsenko, and I. P. Prosvirin, Atomic and Electronic Structure of SiOx Films Obtained with Hydrogen Electron Cyclotron Resonance Plasma, Journal of Experimental and Theoretical Physics, 2020, Vol. 131, No. 6, pp. 940–944

225. Andrei Gismatulin, Vladimir Gritsenko, Timofey Perevalov, Dmitry Kuzmichev, Anna Chernikova, and Andrey Markeev, Charge Transport Mechanism in Atomic Layer Deposited Oxygen-Deficient TaOx Films, Phys. Status Solidi B 2021, 258, 2000432

224. Te JuiYen, Albert Chin1 & VladimirGritsenko, High Performance All Nonmetal SiNx Resistive Random Access Memory with Strong Process Dependence, Scientific Reports | (2020) 10:2807 | https://doi.org/10.1038/s41598-020-59838-y

223. Yu.N. Novikova, V.A. Gritsenko, The charge transport mechanism in amorphous boron nitride, Journal of Non-Crystalline Solids 544 (2020) 120213

222. V.A. Voronkovskii, T.V. Perevalov, R.M.H. Iskhakzay , V.Sh. Aliev , V.A. Gritsenko, I.P. Prosvirin, Phonon-assisted electron tunneling between traps in silicon oxide films treated in hydrogen plasma, Journal of Non-Crystalline Solids 546 (2020) 120256

221. T.V. Perevalov, V.A. Volodin, G.N. Kamaev, G.K. Krivyakin, V.A. Gritsenko, I.P. Prosvirind, Electronic structure and nanoscale potential fluctuations in strongly nonstoichiometric PECVD SiO_x, Journal of Non-Crystalline Solids 529 (2020) 119796

220. Yu. N. Novikov, V.A. Gritsenko, Charge transport mechanism and amphoteric nature of traps in amorphous silicon nitride, Journal of Non-Crystalline Solids 544 (2020) 120186

219. A. A. Gismatulin, Oleg M. Orlov, V. A. Gritsenko, V. N. Kruchinin, D. S. Mizginov, and G. Ya. Krasnikov, Charge transport mechanism in the metal–nitride–oxide–silicon forming-free memristor structure, Appl. Phys. Lett. 116, 203502 (2020); https://doi.org/10.1063/5.0001950

218. V. A. Gritsenko and A. A. Gismatulin, Charge transport mechanism in La:HfO₂, Appl. Phys. Lett. 117, 142901 (2020); https://doi.org/10.1063/5.002177

217. Damir R. Islamov, Timur M. Zalyalov, Oleg M. Orlov, Vladimir A. Gritsenko, and Gennady Ya. Krasnikov, Impact of oxygen vacancy on the ferroelectric properties of lanthanum-doped hafnium oxide, Appl. Phys. Lett. 117, 162901 (2020); https://doi.org/10.1063/5.0023554

216. Timofey V. Perevalov, Andrei A. Gismatulin, Dmitry S. Seregin, Yingjie Wang, Haoyu Xu, Vladimir N. Kruchinin, Evgeniy V. Spesivcev, Vladimir A. Gritsenko, Kamil’ A. Nasyrov, Igor’ P. Prosvirin, Jing Zhang, Konstantin A. Vorotilov, and Mikhail R. Baklanov, Critical properties and charge transport in ethylene bridged organosilica low-κ dielectrics, J. Appl. Phys. 127, 195105 (2020); https://doi.org/10.1063/1.5145239

215. Timofey V. Perevalov, * Andrei A. Gismatulin, Andrei E. Dolbak, Vladimir A. Gritsenko, Elena S. Trofimova, Vladimir A. Pustovarov, Dmitry S. Seregin, Konstantin A. Vorotilov, and Mikhail R. Baklanov, Charge Transport Mechanism and Trap Origin in MethylTerminated Organosilicate Glass Low-κ Dielectric, Phys. Status Solidi A 2021, 218, 2000654

214 . Te Jui Yen, Albert Chin, and Vladimir Gritsenko, High-Performance Top-Gate Thin-Film Transistor with an Ultra-Thin Channel Layer, Nanomaterials, 2020, 10, 2145; doi:10.3390/nano10112145

213 . В. А. Гриценко, В. Н. Кручинин , И. П. Просвирин, Ю. Н. Новиков, А. Чин, В. А. Володин СТРОЕНИЕ И ЭЛЕКТРОННАЯ СТРУКТУРА a-SiN_x : H, ЖЭТФ, 2019, том 156, вып. 5 (11), стр. 1003–1015

212. V.A.Volodin, G.N.Kamaev, V.A.Gritsenko, A.A. Gismatulin, A.Chin, M.Vergnat, Memristor effect in GeO[SiO₂] and GeO[SiO] solid alloys films, Appl. Phys. Lett. 114, 233104 (2019); https://doi.org/10.1063/1.5079690

211. A. A. Gismatulin, V. A. Gritsenko, D.S. Seregin, K.A. Vorotilov and M.R. Baklanov, Charge transport mechanism in periodic mesoporous organosilica low-k dielectric, Appl Phys Lett v.115, p.082904, 2019 https://doi.org/10.1063/1.5113633

210. Te Jui Yen, Albert Chin, Vladimir Volodin, and Vladimir Gritsenko, Novel All Non-Metal Resistive Random Access Memory, Scientific Reports 9:6144, 2019 | https://doi.org/10.1038/s41598-019-42706-9

209. V.A. Gritsenko, A.A. Gismatulin, A. P. Baraban, A. Сhin, Mechanism of Stress Induced Leakage Current in Si₃N₄,  Mater. Res. Express 6 (2019) 076401 https://doi.org/10.1088/2053-1591/ab1223

208. Yu. N. Novikov, V. A. Gritsenko, New multilayer graphene-based flash memory Mater. Research Express, v.6, p. 106306, 2019.

207. В. Н. Кручинин, Т. В. Перевалов, Г. М. Камаев, С. В. Рыхлицкий, В. А. Гриценко, ОПТИЧЕСКИЕ СВОЙСТВА НЕСТЕХИОМЕТРИЧЕСКОГО ОКСИДА КРЕМНИЯ SiO_x (x<2), Оптика и Спектроскопия, т.12, вып 5, с.769-773, 2019

206. M.S. Lebedev, V.N. Kruchinin, M.Yu. Afonin, I.V. Korolkov, A.A. Saraev, A.A. Gismatulin, V.A. Gritsenko, Optical properties and charge transport of textured Sc₂O₃ thin films obtained by atomic layer deposition, Applied Surface Science, 478, 690-698, 2019; https://doi.org/10.1016/j.apsusc.2019.01.288

205. Andrei A. Gismatulin, Vladimir N. Kruchinin, Vladimir A. Gritsenko, Igor P. Prosvirin, Te-Jui Yen and Albert Chin "Charge Transport mechanism of high-resistive state in RRAM based on SiO_x, Applied Physics Letters, v.114, p. 033503, 2019; https://doi.org/10.1063/1.5074116

204. T.V. Perevalov, A.K. Gutakovskii, V.N. Kruchinin, V.A. Gritsenko, I. P. Prosvirin, Atomic and electronic structure of ferroelectric La-doped HfO₂ films, Mater. Res. Express v. 6 p. 036403, 2019; https://iopscience.iop.org/article/10.1088/2053-1591/aaf436/meta

203. Т. В. Перевалов, В. А. Гриценко, А. К. Гутаковский, И. П. Просвирин, Строение сегнетоэлектрических плёнок Hf_0.9La_0.1O₂, полученных методом атомно-слоевого осаждения, Письма в ЖЭТФ, т. 109, 112-117, 2019; http://www.jetpletters.ac.ru/ps/2207/article_33085.shtml

202. Vladimir A Gritsenko, Andrei Gismatulin and Albert Chin, Multiphonon trap ionization transport in nonstoichiometric SiN_x, Material Research Express, v.6. p. 036304, 2019 https://doi.org/10.1088/2053-1591/aaf61e

201. Damir R. Islamov, Vladimir A. Gritsenko, Timofey V. Perevalov, Vladimir A. Pustovarov, Oleg M. Orlov, Anna G. Chernikova, Andrey M. Markeev, Gennadiy Ya. Krasnikov, Stefan Slesazeck, Uwe Schroder, Thomas Mikolajick, Identification of the nature of traps involved in the field cycling of Hf_0.5Zr_0.5O₂-based ferroelectric thin films, Acta Materialia, v.166, 47-55, 2019; https://doi.org/10.1016/j.actamat.2018.12.008

200. Д.Р. Исламов, В.А. Гриценко, В.Н. Кручинин, Е.В. Иванова, М.В. Заморянская, М.С. Лебедев, Эволюция проводимости и катодолюминесценции пленок оксида гафния при изменении конценрации вакансий кислорода, Физика Твердого Тела, т.60, вып. 10 с.2006-2013, 2018
D.R. Islamov, V.A. Gritsenko, V.N. Kruchinin, E.v. Ivanova, M.V. Zamoryanskaya, M.s. Lebedev, The Evolution of the Conductivity and cathodoluminescence of the Films of Hafnium Oxide in the Case of a Change in the Concentration of Oxygen Vacancies, Physics of the Solid State, v.60, N.10, p. 2050-2057, 2018

199. В.А. Гриценко, Т.В. Перевалов, В.А. Володин, В.Н. Кручинин, А.К. Герасимова, И.П. Просвирин, Строение и электронная структура нестехиометрического, обогащенного металлом ZrOx, Письма в ЖЭТФ, т.108, с.230-235, 2018
V. A. Gritsenko, T. V. Perevalov, V. A. Volodin, V.N. Kruchinin, A.K. Gerasimova, I. P. Prosvirin, Atomic and Electronic Structures of Metal-Rich Noncentrosymmetric ZrOx, JETP Letters 108(4):226-230, 2018 DOI: 10.1134/S002136401816004X

198. Vladimir A. Gritsenko, Timofey V. Perevalov, Vladimir N. Kruchinin, Vladimir S. Aliev, Alina K. Gerasimova, Simon B. Erenburg, Svetlana V. Trubina, Kristina O. Kvashnina and Igor P. Prosvirin, Nanoscale Potential Fluctuations in Zirconium Oxide and the Flash Memory Based on Electron and Hole Localization, Advanced Electronic Materials, p. 1700592, 2018, DOI: 10.1002/aelm.201700592

197. Vladimir A. Gritsenko, Vladimir A. Volodin, Vladimir N. Kruchinin, Timofey V. Perevalov, Alina K. Gerasimova, Vladimir Sh. Aliev, Igor P. Prosvirin, Nanoscale Potential Fluctuations in Non-Stoichiometrics Tantalum Oxide, Nanotechnology, v.29, p. 264001, 2018 https://doi.org/10.1088/1361-6528/aad430

196. А.А. Карпушин, В.А. Гриценко, Электронная структура SiOx переменного состава, Письма в ЖЭТФ, т. 108, вып.2, с. 114-118, 2018.
A. A. Karpushin, V. A. Gritsenko, Electronic Structure of Amorphous SiOx with Variable Composition, JETP Letters, 2018, Vol. 108, No. 2, pp. 127-131 https://doi.org/10.1134/S0021364018140084

195. Konstantin V. Egorov, Dmitry S. Kuzmichev, Andrey A. Sigarev, Denis I. Myakota, Sergey S. Zarubin, Timofey V. Perevalov, Vladimir A. Gritsenko, Cheol Seong, Hwang, and Andrey M. Markeev, Hydrogen Plasma Enhanced Atomic Layer Deposition of TaOx: Saturation Studies and Method for Oxygen Deficiency Control, Journal of Materials Chemistry C, v. 6, p. 9667-9674, 2018 https://doi.org/10.1002/aelm.201700592.

194. Timofey T.V. Perevalov, Damir R. Islamov, Vladimir A Gritsenko and Igor P. Prosvirin, Electronic structure of stoichiometric and oxygen-deficient ferroelectric Hf_0.5Zr_0.5O₂, Nanotechnology, v.29 p. 194001, 2018, https://doi.org/10.1088/1361-6528/aaacb1

193. В.Н. Кручинин, В.А. Володин, Т.В. Перевалов, А.К. Герасимова, В.Ш. Алиев, В.А. Гриценко, Оптические свойства нестехиометрического оксида тантала TaOx (x < 5/2) по данным спектроэллипсометрии и комбинационного рассеяния, Оптика и спектроскопия, том 124, вып. 6, с.777-782, 2018
V. N. Kruchinin, V. A. Volodin, T. V. Perevalov, A. K. Gerasimova, V. Sh. Aliev, and V. A. Gritsenko, Optical Properties of Nonstoichiometric Tantalum Oxide TaOx (x < 5/2) According to Spectral-Ellipsometryand Raman-Scattering Data, Optics and Spectroscopy, 2018, Vol. 124, No. 6, pp. 808-813; https://doi.org/10.1134/S0030400X18060140

192. В.А. Володин, В.А. Гриценко, A. Chin, Локальные колебания связей кремний-кремний в нитриде кремния, Письма в ЖТФ, том 44, вып. 10 с.37-45, 2018
V. A. Volodin, V. A. Gritsenko, and A. Chin, Local Oscillations of Silicon-Silicon Bonds in Silicon Nitride, TECHNICAL PHYSICS LETTERS Vol. 44 No. 5 §. 424-427, 2018; https://doi.org/10.1134/S1063785018050279

191. В.A. Гриценко, Ю.Н. Новиков, A. Сhin, Ближний порядок, транспорт заряда в SiOx : эксперимент и численное моделирование, Письма в ЖТФ, 2018, том 44, вып. 12 с.81-88, 2018
V. A. Gritsenko, Yu. N. Novikov, and A. Chin, Short-Range Order and Charge Transport in SiOx: Experiment and Numerical Simulation, Technical Physics Letters, Vol. 44, No. 6, pp. 541-544, 2018; https://doi.org/10.1134/S1063785018060196

190. С. Б. Эренбург, С. В. Трубина, К. О. Квашнина, В. Н. Кручинин, В. В. Гриценко, А. Г. Черникова , А. М. Маркеев, БЛИЖНИЙ ПОРЯДОК В АМОРФНОМ И КРИСТАЛЛИЧЕСКОМ СЕГНЕТОЭЛЕКТРИЧЕСКОМ Hf_0.5Zr_0.5O₂, ЖЭТФ, 2018, том 153, вып. 6, стр. 982-991, 2018;
S. B. Erenburg, S. V. Trubina, K. O. Kvashnina, V. N. Kruchinin, V. V. Gritsenko, A. G. Chernikova, and A. M. Markeev, Short-Range Order in Amorphous and Crystalline Ferroelectric Hf_0.5Zr_0.5O₂, Journal of Experimental and Theoretical Physics, 2018, Vol. 126, No. 6, pp. 816-824 http://www.jetp.ac.ru/cgi-bin/dn/r_153_0982.pdf

189. Timofey T.V. Perevalov, Damir R. Islamov, Vladimir A Gritsenko and Igor P. Prosvirin, Electronic structure of stoichiometric and oxygen-deficient ferroelectric Hf_0.5Zr_0.5O₂, Nanotechnology 29 (2018) 264001 (9pp) https://doi.org/10.1088/1361-6528/aaba4c

188. Perevalov, Timofey; Gritsenko, Vladimir; Gismatulin, Andrey; Voronkovskii, Vitalii; Gerasimova, Alina; Aliev, Vladimir; Prosvirin, Igor', "Electronic structure and charge transport in nonstoichiometric tantalum oxide" Nanotechnology, v. 29, p. 264001, 2018; https://iopscience.iop.org/article/10.1088/1361-6528/aaba4c/meta

187. Vladimir A. Gritsenko, Timofey V. Perevalov, Vitaliy A. Voronkovskii, Andrei A. Gismatulin, Vladimir N. Kruchinin, Vladimir Sh. Aliev, Vladimir A. Pustovarov, Igor P. Prosvirin, and Yakov Roizin. Charge Transport and the Nature of Traps in Oxygen Deficient Tantalum Oxide ACS Appl. Mater. Interfaces, 10, 3769?3775, 2018, DOI: 10.1021/acsami.7b16753

186. D.R. Islamov, V.A. Gritsenko , M.S. Lebedev, Determination of trap density in hafnia films produced by two atomic layer deposition techniques, Microelectronic Engineering, 2017, v. 178, p. 104-107. http://dx.doi.org/10.1016/j.mee.2017.05.004

185. D.R. Islamov, V.A. Gritsenko, A. Chin, About charge transport in hafnium and zirconium oxides thin films , Avtometriya (in Russian) , 2017, v. 53, N 2, p. 102-108. DOI:10.15372/AUT20170212

184. A.A. Chernov, D.R. Islamov, A.A. Pik’nik, T.V. Perevalov, V.A. Gritsenko, Three-dimensional non-linear complex model of dynamic memristor switching, ECS Transactions, 2017, v. 75, iss. 32, p. 95-104. DOI: 10.1149/07532.0095ecst

183. D.R. Islamov, V.A. Gritsenko, M.S. Lebedev, Determination of Trap Density in Hafnium Oxide Films Produced by Different Atomic Layer Deposition Techniques. ECS Transactions, 2017, v. 80, iss. 1, p. 265-270. DOI:10.1149/08001.0265ecst

182. D.R. Islamov, O.M. Orlov, V.A. Gritsenko, G. Ja. Krasnikov, The Charge Trap Density Evolution in Wake-up and Fatigue Modes of FRAM, ECS Transactions, 2017, v. 80, iss. 1, p. 279-281. DOI:10.1149/08001.0279ecst

181. D.R. Islamov, A.G. Chernikova, M.G. Kozodaev, A. M. Markeev, T.V. Perevalov, V.A. Gritsenko, O.M. Orlov, Leakage currents mechanism in thin Flms of ferroelectric Hf_0.5Zr_0.5O₂, Journal of Physics: Conference Series, 2017, v. 864, p. 012002. DOI: 10.1088/1742-6596/864/1/012002

180. D.R Islamov, V.A. Gritsenko, T.V. Perevalov, O.M. Orlov, G.Ya. Krasnikov, Mechanism of charge transport of stress induced leakage current and trap nature in thermal oxide on silicon, Journal of Physics: Conference Series, 2017, v. 864, p. 012003. DOI: 10.1088/1742-6596/864/1/012003

179 .D.R. Islamov, A.G. Chernikova, M.G. Kozodaev, T.V. Perevalov, V.A. Gritsenko, O.M. Orlov, A.V. Markeev, Leakage Currents Mechanism in Thin Films of Ferroelectric Hf_0.5Zr_0.5O₂, ECS Transactions, 2017, v.75, iss. 32, p. 123-129. DOI: 10.1149/07532.0123ecst.

178. V.N. KRUCHININ, T.V. PEREVALOV, V.V. ATUCHIN, V.A. GRITSENKO, A.I. KOMONOV, I.V. KOROLKOV, L.D. POKROVSKY, CHENG WEI SHIH, and ALBERT CHIN, Optical Properties of TiO₂ Films Deposited by Reactive Electron Beam Sputtering, Journal of Electronic materials, Vol. 46, No. 10, p. 6089-6095, 2017, DOI: 10.1007/s11664-017-5552-3

177. V.A. Gritsenkov, Hot Electrons in Silicon Oxide, Physics Uspechi, v.187, p. 971-979, 2017.

176. V. A. Shvets, V. N. Kruchinin, and V. A. Gritsenko, Dispersion of the Refractive Index, in High-k Dielectrics, Optics and Spectroscopy, 2017, Vol. 123, No. 5, pp. 728–732. ("Russian version of paper" )

175. V.N. Kruchinin, V.Sh. Aliev, A.K. Gerasimova, V.A. Gritsenko, Optical properties of nonstoichiometric ZrOx based on ellipsometric data, Spectroelipsometria, optica i spectroscopia, (in Russia) v.121, p.84, 2016.

174.Yu.N. Novikov, V.A. Gritsenko , G. Y. Krasnikov. O. M. Orlov FLASH MEMORY BASED ON MULTIGRAPHEN, Microelectronics, v45, p.66, 2016

173. Gritsenko Vladimir; Islamov, Damir; Perevalov, Timofey; Aliev, Vladimir; Yelisseyev, Alexander; Lomanova, Elena; Pustovarov, Vladimir; Chin, Albert The Oxygen Vacancy in Hafnia as a Blue Luminescence Center and a Trap of Charge Carriers", J. Phys. Chem. C, 2016, 120 (36), pp 19980-19986, DOI:10.1021/acs.jpcc.6b05457

172. Damir R. Islamov, Vladimir A. Gritsenko, Timofey V. Perevalov, Oleg M. Orlov, and Gennady Ya. Krasnikov, The charge transport mechanism and electron trap nature in thermal oxide on silicon, Appl. Phys. Lett. V.109, p. 052901, 2016, http://dx.doi.org/10.1063/1.4960156

171. V.A. Gritsenko, N.V. Perevalov, O.M. Orlov, G. Ya. Krasnikov, Nature of Traps Responsible for the Memory Effect in Silicon Nitride, Applied Physics Letteres, v. 109, p. 06294, 2016, http://dx.doi.org/10.1063/1.4959830

170. Yu.N. Novikov, V.A. Gritsenko, Relaxation current Si3N4: experiment and numerical modeling, Solid State Physics, 2016.

169. O. M. Orlov, D. R. Islamov, A.G. Chernikova, M.G. Kozodaev, A,M, Markeev, T.V. Perevalov, V.A. Gritsenko, G. Y. Krasnikov. CHARGE TRANSPORT IN THIN LAYERS FERROELECTRIC Hf0.5Zr0.5O2, Microelectronics, 2016, v 45, ь 5, p. 1-8

168. Aliev, Vladimir; Gerasimova, Alina; Kruchinin, Vladimir; Gritsenko, Vladimir; Prosvirin, Igor; Badmaeva, Iren, The atomic structure and chemical composition of HfOx (x<2) films prepared by ion-beam sputtering deposition" by ion beam sputtering, Material Research Express, v.3, p 085008, 2016

167. V.N. Cruchinin, V. Sh. Aliev, A.K. Gerasimova, V.A. Gritsenko, Optical properties of non-stoichiometric ZrOx ACCORDING spectroellipsometer, Optics and Spectroscopy, v 121, N 2, p. 84-88, 2016,

166. Vasily Kaichev, Tamara Smirnova, Lubov Yakovkina, Ekaterina Ivanova; Maria Zamoryanskaya, Andrey Saraev, Vladimir Pustovarov, Timofey Perevalov, Vladimir Gritsenko, Structure, chemistry and luminescence properties of dielectric LaxHf1-xOy films, Materials Chemistry and Physics, v.175, p. 200-205, 2016

165. V.A. Gritsenko , D. R. Islamov, O. M. Orlov, G. Y. Krasnikov. TRANSPORT MECHANISM OF CHARGE IN NATURE AND TRAPS SILC The thermal oxide on silicon electronic equipment, SER. MATERIALS, 2016

164. A.A. Karpushin, A.N. Sorokin, V.A. Gritsenko, The silicon-silicon Si-Si bond as deep traps for electrons and holes in silicon nitride, JETP Letter, v.103, N.3, p.188-192, 2016

163. Vladimir A. Gritsenko, Timofey V. Perevalov, Damir R. Islamov, Electronic properties of hafnium oxide: A contribution from defects and traps, Physics Reports, 613, p.1-20, 2016

162. V.A. Pustovarov, ’.P. Smirnova, M.S. Lebedev, V.A. Gritsenko, and M. Kirm Intrinsic and defect related luminescence in double oxide films of Al-Hf-O system under soft X-ray and VUV excitation // Journal of Luminescence. Volume 170, Part 1 , P.161-167. 2016. DOI: http://dx.doi.org/10.1016/j.jlumin.2015.10.053

161. D. R. Islamov, A.G. Chernikova, M.G. Kozodaev, A.M, Markeev, T,V, Perevalov, V.G. Gritsenko, O.M. Orlov, The mechanism of charge transport in amorphous thin films and ferroelectric Hf0.5Zr0.5O2, JETP Letter, v.102,N.7-8, p.610-614, 2015.

160. D. R. Islamov, V. A. Gritsenko, and T. V. Perevalov, The Influence of Defects on the Electronic Properties of Hafnia ECS Transactions, 69 (5), 197-203 (2015)

159. O. M. Orlov, G. Ya. Krasnikov, V. A. Gritsenko, V. N. Kruchinin, T. V. Perevalov, V. Sh. Aliev, D. R. Islamov, and I. P. Prosvirin, Nanoscale Potential Fluctuation in Non-Stoichiometric Hafnium Suboxides, ECS Transactions, 69 (5), 237-241, 2015.

158. V.N. Kruchinin, V.Sh. Aliev, T.V. Perevalov, D.R. Islamov, V.A. Gritsenko ,I.P. Prosvirin,C.H. Cheng, A. Chin Nanoscale potential fluctuation in non-stoichiometric HfOx and low resistive transport in RRAM, Microelectronic Engineering, v 147, p.165-167 2015

157. D. R.Islamov, T. V.Perevalov, V.A. Gritsenko , C. H.Cheng, and A.Chin, Charge transport in amorphous Hf0.5Zr0.5O2, Appl. Phys. Lett. v. 106, p. 102906, 2015

156. D.V. Gulyaev, T.V. Perevalov, V.S. Aliev, K.S. Zhuravlev, V.A. Gritsenko , A.P. Yelisseyev, The Origin o Blue Luminescence Band in Zirconium, Solid State Physics (in Russian) 57, N7, p. 1320-1324 ,2015

155. E.V. Ivanova, M.V. Zamoryanskaya, V.A. Pustovarov, V.Sh. Aliev, V.A. Gritsenko , A.P. Yelisseyev, Cathodo- and photoluminescence rise in amorphous hafnium oxide at annealing in oxygen, JETP, V.147, N.4, б.820-826, 2015

154. T.V. Perevalov, D.V. Gulyaev, V.S. Aliev, K.S. Zhuravlev, V.A. Gritsenko , A.P. Yelisseyev, The Origin of 2.7 eV Blue Luminescence Band in Zirconium, Journal of Applied Physics, v.116, p.244109, 2014

153. Damir R. Islamov, V.A. Gritsenko , C. H. Cheng , Albert Chin, Origin of traps and charge transport mechanism in hafnia, Applied Physics Letteres. V. 105, p. 222901, 2014

152. Damir R. Islamov, V.A. Gritsenko , C. H. Cheng , Albert Chin, Percolation conductivity in hafnium sub-oxides, Applied Physics Letteres, v.105, p. 262903, 2014

151. Atuchin Victor; Kaichev, Vasily; Korolkov, Ilya; Saraev, Andrey; Troitskaia, Irina; Perevalov Timofey; V.A. Gritsenko Vladimir, Electronic Structure of Noncentrosymmetric ?-GeO2 with Oxygen Vacancy: Ab Initio Calculations and Comparison with Experiment, The Journal of Physical Chemistry C, v.118 p.3644-3650, 2014

150. Timofey Viktorovich Perevalov, Andrey Evgenievich Dolbak, Vasilii Aleksandrovich Shvets, Vladimir Alekseevich Gritsenko, Tatijana Ivanovna Asanova and Simon Borisovich Erenburg, Atomic and electronic structure of gadolinium oxide, Central European Journal of Physics,v.65, N.1, p. 10704, 2014

149. S.S. Nekrashevich, V.A. Gritsenko , Electronic Structure of Silicon Oxide, Solid State Physics (in Russian) v.56, N2, p.209-223, 2014

148. D. R. Islamov, V.A. Gritsenko , C. H. Cheng, A. Chin, Charge carrier transport mechanism in high-k dielectrics and their based resistive memory cells, Optoelectronics, Instrumentation and Data Processing, 2014, V. 50N, n.3, p. 310-314

147. T.V. Perevalov, V.Sh. Aliev, V.A. Gritsenko , A.A. Saraev, V.V. Kaichev, E.V. Ivanova, M.V. Zamoryanskaya, Origin of 2.7 eV luminescence and 5.2 eV excitation band in hafnium oxide, Applied. Physics Letteres, v.104, p. 071904, 2014.

146. V.V. Kaichev, E.V. Ivanova, M.V. Zamoryanskaya, T.P. Smirnova, L.V. Yakovkina, V.A. Gritsenko , XPS and cathodoluminescence studies of HfO2, Sc2O3, and (HfO2)1-x(Sc2O3)x films, The European Physical Journal Applied Physics, p. 10302, 2013

145. D. R. Islamov, V.A. Gritsenko , C. H. Cheng, and A. Chin, Evolution of the conductivity type in germania by varying the stoichiometry, Applied Phys. Let. V.103, p. 232904, 2013.

144. A.N. Sorokin, A.A. Karpushin, Gritsenko, Electronic Structure of SiNx, Jetp Lett, v.98, N11, p.801-805, 2013(in Russian)

143. K.A. Nasyrov, V.A. Gritsenko , Transport Mechanisms of Electrons and Holes in Dielectric Films, Physics Uspekhi, (Russian Version)

142. T.V. Perevalov, V.Sh. Aliev, V.A. Gritsenko , A.A. Saraev, V.V. Kaichev, Electronic structure of oxygen vacancies in hafnium oxide, Microelectronic Engineering v. 109, p. 21-23 (2013)

140. V.A. Gritsenko , Electronic Structure of Silicon Nitride, Physics Uspekhi, v. 55, N.5, p. 498-507, 2012.

139. Yu.N. Novikov, V.A. Gritsenko , Large-Scale Potential Fluctuations Caused by SiOx Compositional Inhomogenity, Physics of the Solid State, v. 54, N3, p. 493-498, 2012(Russian Version)

138. D.R. Islamov, V.A. Gritsenko , C.H. Cheng, A. Chin, Bipolar conductivity in nanocrystallized TiO2, Appl. Phys. Lett. v.101, p. 032101, 2012.

137. A.S. Shaposhnikov, T.V. Perevalov, V.A. Gritsenko , C.H. Cheng, A. Chin, Mechanism of GeO2 resistive switching based on the multi-phonon assisted tunneling between traps, Appl. Phys. Lett. v.100, p. 243506, 2012.

136. Yu.N. Novikov, V.A. Gritsenko , Short-range order in amorphous SiOx by x ray photoelectron spectroscopy, J. Appl. Phys. v. 110, p. 014107, 2011

135. V.A. Gritsenko Electronic structure of silicon nitride (Russian version of paper), UFN, V. 182, N 5, 2012.

134. M.V. Ivanchenko, V.A. Gritsenko , A.V. Nepomnyaashii, and A.A. Saranin, Enhancenment of the Electron -Stimulated Desorption from Amorhous Aluminum Oxide Films on Solicon during an Increase in the substrate Temperature, Techical Physics, v.57, N.5, p. 693-696, 2012 "Russian version of paper" , J.Tech.Phys, V.82, N.5, p.115, 2012.

133. T.V. Perevalov, M.V. Ivanov, V.A. Gritsenko, Electronic and optical properties of hafnia polimorhps, Microelectronic Engineering, v. 88, 1475-1477, 2011.

132. D.R. Islamov, V.A. Gritsenko, C.H. Cheng, A. Chin, Bipolar conductivity in amorphous HfO2, Appl. Phys. Lett. v.99, p. 072109, 2011.

131. S.S. Nekrashevich, V.A. Gritsenko, Electronic structure of silicon oxynitride: Ab-initio calculation and experimental comparison with silicon nitride, J. Appl. Phys, v. 110, p. 114103 (5), 2011.

130. S.S. Shaimeev, V.A. Gritsenko, H. Wong, Wigner crystallization due to electrons localized at deep traps in two-dimensional amorphous dielectric. Appl. Phys. Lett. v.96, p. 263510. 2011.

129. V.A. Gritsenko, H. Wong, Atomic and Electronic Structure of Traps in Silicon Oxide and Silicon Oxynitride, Critical Review in Solid State and Material Sciences, v. 36, p. 129-147, 2011.

128. M. Ivanov, T.V. Perevalov, V.S. Aliev, V.A. Gritsenko, V.V. Kaichev, Electronic Structure of d-Ta2O5 with oxygen vacancy: ab initio calculation and comparison with experiment. J. Appl. Phys. v. 110, p. 024115 (1-5), 2011.

127. S.S. Nekrashevich, A.V. Shaposhnikov, V.A. Gritsenko, Study of silicon nitride electronic and atomic structure and defects, JETP Letters, V.94, N3,p.202-205, 2011. "Russian version of paper" , JETP Letters, V.94 N3,яp. 220-223, 2011.

126. K.A. Nasyrov, V.A. Gritsenko, Charge transport in dielectrics via tunneling between traps, J. Appl. Phys. v. 109, p. 097705 (2011).

125. V. A. Gritsenko, V. A. Nadolinny, K. S. Zhuravlev, J. B. Xu, and H. Wong, Quantum Confinement and Electron Spin Resonance Characteristics in Si-implanted Silicon Oxide Films, J. Appl. Phys. v. 109, p. 084502 (2011)

124. S.S. Shaimeev, V.A. Gritsenko , Wigner Crystallization of Electrons Localized by Deep Traps in Two-Dimentional Amorphous Dielectric, Journal of Experimental and Theoretical Physics, v.139, N2, p 1-4, 2011.

123. K.A. Nasyrov, V.A. Gritsenko , Charge Transport in Dielectrics by Tunneling between Traps, Journal of Experimental and Theoretical Physics,v.109,p.093705, 2011.

122. M.V. Ivanov, NT.V. Perevalov, V.S. Aliev, V.A. Gritsenko , V.V. Kaichev, Calculation of Ta2O5 with Oxygen vacancy from Fist Principles and Comparison with Experiment, Journal of Experimental and Theoretical Physics, JETP, v.112, N 6, p.1036-1042, 2011. "Russian version of paper" , JETP, v.139, N.6, p. 1182-1189, 2011.

121. V.A. Pustovarov, T.V. Perevalov, V.A. Gritsenko , T.P. Smirnova, A.P.Yelisseyev, Oxygen vacancy in Al2O3: photoluminescence study and first principle simulation, Thin Solid Films,v.519, p.6319-6323, 2011.

120. T.V. Perevalov, V.A. Gritsenko , Electronic Structure of TiO2 Rutile with Oxygen Vacancies: Fist Principal Calculations and Comparison with Experiments, Journal of Experimental and Theoretical Physics, v.112, N.2, p. 310-316, 2011. "Russian version of paper"

119. S.S. Nekrashevich, V.A. Gritsenko , R. Klauser, S. Gwo, Electronic Structure of Silicon Nitride according to ab initio Quantum-Chemical Calculation and Experimental Data, Journal of Experimental and Theoretical Physics, v.111, N.4, p. 658-665, 2010. "Russian version of paper"

118. V.A. Pustovarov, V.S. Aliev, T.V. Perevalov, V.A. Gritsenko , A.P. Eliseev, Electronic Structure of Oxygen Vacancy in Al2O3: Ab Initio Quantum-Chemical Calculation and Photoluminescence Experiments, Journal of Experimental and Theoretical Physics, v.111, N6, p 989-995, 2010. "Russian version of paper"

117. T. V. Perevalov , V. A. Gritsenko , "Application and electronic structure of high- permittivity dielectrics" Physics-Uspekhi, 53(6), 2010. "Russian version of paper"

116. T. V. Perevalov , V. A. Gritsenko , V. V. Kaichev, Electronic structure of aluminum oxide: ab-initio simulations of alfa and gamma phases and comparison with experiment for amorphous films, Eur. J. Appl. Physics, v.52, p.30501(1-7) 2010.

115. T.V. Perevalov, O.E. Tereshenko, V.A. Gritsenko , V.A. Pustovarov , A.P. Yelisseyev, Chanjin Park, Jeong Hee Han, Choongman Lee, Oxygen Deficiency Defects in Amorphous Al2O3, J. Appl. Phys. v.108, p.013501, 2010.

114. S. S. Shaimeev, V. A. Gritsenko , Hei Wong, Wigner crystallization due to electrons localized at deep traps in two-dimensional amorphous dielectric, Applied Physics Letters, v. 96, p. 253510, 2010.

113. N. Novikov, A.V. Vishnjakov, V.A. Gritsenko , K.A. Nasyrov, Y. Wong, , Modeling the charge transport mechanism in amorphous Al2O3 with multiphonon trap ionization effect, Microelectronics Reliability, v. 50, N2, p.207-210, 2009.

112. Yu.N. Novikov, V.A. Gritsenko , K.A. Nasyrov, "Multiphonon Mechanism of the Ionization of Traps in Al2O3: Experiment and Numerical Simulation" Letteres to JETP, v. 89, p. 599-603, 2009. "Russian version of paper"

111. Yu. N. Novikov, V.A. Gritsenko , K.A. Nasyrov, "Optimization of the Dielectric Constant of a Blocking Dielectric in the Nonvolatile Memory Based on Silicon Nitride" , Optoelectronics, v.45, N4, p.80-84, 2009.

110. S.S. Nekrashevich, V.V. Vasilev,A.V. Shaposhnikov, V.A. Gritsenko , Electronic structure of memory traps in silicon nitride, Microelectronic Engineering 86, N.7-9, 1866-1869, 2009.

109. V.A. Gritsenko , " Structure of silicon/oxide and nitride/oxide interface " , UFN, V 179, N 9, б. 921-930, 2009. "Russian version of paper"

108. K.A. Nasyrov, S.S. Shaimeev, V.A. Gritsenko , "Trap -Assisted Tunneling Hole Injection in SiO2:Experiment and Theory", JETP , v.136, N.5, p. 910-918, 2009.

107. K.A. Nasyrov, S.S. Shaimeev, V.A. Gritsenko , J.H. Han, Phonon-coupled trap-assisted charge injection in metal-nitride-oxide-silicon/silicon-oxide-nitride-oxide-silicon structures, J. Appl. Phys. 105, 123709, 2009.

106. Yu. N. Novikov, V.A. Gritsenko , K.A. Nasyrov, Charge transport mechanism in amorphous alumina, Appl. Phys. Lett. 94, 222904, 2009.

105. T.V. Perevalov, A.V. Shaposhnikov, V.A. Gritsenko, Electronic structure of bulk and defects alfa- and gamma-Al2O3, Microelectronic Engineering, 86, 1915, March, 2009.

T.V. Perevalov, A.V. Shaposhnikov, V.A. Gritsenko Electronic structure of bulk and defects alfa- Al2O3, IzvestiaVuzov "Russian version of paper"

104. A.V. Vishnyakov, Yu.N. Novikov, V.A. Gritsenko , K.A. Nasyrov, The charge transport mechanism in silicon nitride: Multi-phonon trap ionization, Solid- State Electronics, V. 53, N. 3, p. 251-255, 2009.

103. Sorokin, A. A. Karpushin, V. A. Gritsenko, H. Wong "Electronic Structure of Amorphous Silicon Oxynitride with Different Compositions", Journal of Applied Physics, v. 105, 073706, 2009.

102. S.N. Svitasheva, V.A. Gritsenko , B.A. Kolesov, Optical Properties of TiO2 made by air oxidation of Ti, Physica Status Solidi, C5, N.5, p. 1101-1104, 2008.

101. V.A. Svets, V.Sh. Aliev, D.V. Gritsenko, S.S. Shaimeev, E.V. Fedosenko, S.V. Rykhlitski, V.V. Atuchin, V.A. Gritsenko , V.M. Tapilin, H. Wong, Electronic Structure and Charge Transport Properties of Amorphous Ta2O5 films, J. Non-Crystal. Solids, 354, 3025-3033 (2008)

100. V.A. Gritsenko , Atomic structure of amorphous non-stoihiometric silicon oxides and hitride, Physics-Uspekhi, v.51, N7, p. 699-708, 2008. "Russian version of paper"

99. Sorokin, A.A. Karpushin, V. A. Gritsenko, H. Wong, "Electronic structures of silicon nitride revealed by tight binding calculations" J. Non-Crystal. Solids, 354, 1531-1536 (2008)

98. T.P. Smirnova, V.V. Kaichev, L.V. Yakovkina, V.I. Kosyakov, S.A. Beloshapkin, T.P. Smirnova, M.S. Lebedev, V.A. Gritsenko , Composition and Structure of Hafnia Films on Silicon, Inorganic Materials, V.44, N9, p. 965-970, 2008. "Russian version of paper"

97. A.A Rastorguev, V.I. Belyi, T.P. Smirnova, , M.V. Zamoryanskaya, L.V. Yakovkina, V.A. Gritsenko , H.Wong, Luminescence of Intrinsic and Extrinsic Defects in Hahnium Oxide Films, Phys. Rev. B76. ь 23. P. 235315 (1-7) (2007)

96. S. S. Shaimeev, V. A. Gritsenko, K. Kukli, H. Wong, D. Kang, E.-H. Lee, C. W. Kim, "Single band electronic conduction in hafnium oxide prepared by atomic layer deposition", Microelectronics Reliability, V. 47, p. 36-37 (2007).

95. T.V. Perevalov, A.V. Shaposhnikov, V.A. Gritsenko , H. Wong, J.H. Han, C.W. Kim, Electronic Structure of ?-Al2O3: Ab-initio Simulation and Comparison with Experiment, JETP Lett. V.55, N.3, pp. 165-168 (2007). "Russian version of paper"

94. T.V. Perevalov, V.A. Gritsenko , S.B. Erenburg, A.M. Badalyan, H. Wong, C.W. Kim, Atomic and Electronic Structure of Amorphous and Crystalline Hafnium Oxide: X-ray Photoelectron Spectroscopy and Density Functional Calculations, J. Appl. Phys, V.101, 053704 (2007).

93. B.M. Aupov, V.A. Gritsenko , H. Wong, C.W. Kim, Accurate Ellipsometric measurement of Refractive Index and Thickness of Ultrathin Oxide Film, J. Electrochem. Society, v.153, N.12, p. F277-F283 (2006).

92. K. A. Nasyrov, S. S. Shaimeev, V. A. Gritsenko, J. H. Han, C. W. Kim, J.-W. Lee, Injection of electrons and holes in biased MONOS structures , JETP, v.129, p. 926-937, 2006.

91. A. V. Shaposhnikov, D. V. Gritsenko, I. P. Petrenko, O. P. Pchelyakov, V. A. Gritsenko, S. B. Erenburg, N. . Bausk, Yu. V. Shubin, T. P. Smirnova, H. Wong, C. V. Kim, Atomic and Electronic Structure of ZrO2, Journal of Experimental and Theoretical Physics , v. 129. p. 1-12, 2006.

90 D. V. Gritsenko, S. S. Shaoemeev, V. V. Atuchin, T. I. Grigor’eva, L. D. Pokrovskioe, O. P. Pchelyakov, V. A. Gritsenko, A. L. Aseev, and V. G. Lifshits, Two-Band Conduction in TiO2, Physics of the Solid State, Vol. 48, No. 2, pp. 224-228, 2006.

89. T. V. Perevalov, A. V. Shaposhnikov, V. M. Tapilin , K.A. Nasyrov, D. V. Gritsenko, V. A. Gritsenko, Electronic Structure of ZrO2 and HfO2, Chapter in Book "Defects in High-k Gate Dielectric Stacks", ed. by E. Gusev, Springer, 2006.

88. Yakov Roizin, Vladimir Gritsenko, ONO Structures in Modern Microelectronics. Material Science, Characterization and Application, Chapter in book "Dielectric Films for Advanced Microelectronics", Eds. by M. R. Baklanov, M. Greeen, K. Maex, Wiley&Sons, 2006.

87. V.A.Nadolinny, E.N.Vandyshev, D.V.Gritsenko, K.S.Zhuravlev, V.A.Gritsenko, J.B.Xu, H.Wong, C.W.Kim, Quantum confinement and electron spin resonance in 29Si-implanted SiO2, Submitted to J. Electrochem. Sos. 200.

86. S. S. Shaimeev, V. A. Gritsenko, K. Kukli, H. Wong, D. Kang, E.-H. Lee, C. W. Kim, Unipolar Electronic Conduction in Hafnium Oxide Prepared by Atomic layer Deposition, submitted to Solid State Electronics, 2005.

85. K. A. Nasyrov, D. V. Gritsenko, V. A. Gritsenko, Yu. N. Novikov, E.-H. Lee, S. Y. Yoon, C. W. Kim, Charge Transport Mechanism in Si3N4: Frenkel Effect or Multi-Phonon Ionization?, Excepted by Vestnik RPGU, 2005.

84. V. A. Gritsenko, I. P. Petrenko, D. V. Gritsenko, K. A. Nasyrov, S. B. Erenburg, V. M. Tapilin, H. Wong, V. Poon, J. H. Lee, J.-W. Lee, C. W. Kim, Atomic and Electronic Structures of Amorphous ZrO2 and HfO2 Films , Microelectronics Engineering, v.81, p. 524-529, 2005.

83. V. A. Gritsenko, K. A. Nasyrov, D. V. Gritsenko, Yu. N. Novikov, J. H. Lee, J.-W. Lee, C. W. Kim, Hei Wong, Modeling of a EEPROM Device Based on Silicon Quantum Dots Embedded in High-k Dielectrics, Microelectronics Engineering, 81, 530-534, 2005.

82. D. V. Gritsenko, S. S. Shaimeev, M. A. Lamin, O. P. Pcheljakov, V. A. Gritsenko, V. G. Lifshits, Two band conduction of ZrO2 fabticated by MBE , JETP Lett. V.81, N.11, p. 721-723, 2005.

81. V. A. Gritsenko, K. A. Nasyrov, D. V. Gritsenko, Yu. N. Novikov, A. L. Aseev, J.- W. Lee, C. W. Kim, Memory device based on Si-clusters embedded in high-k dielectric, Semiconductors, v.39, N6, 748-753, 2005.

80. K. A. Nasyrov, V. A. Gritsenko, Yu. N. Novikov, E.-H. Lee, S. Y. Yoon, C. W. Kim, Two-Bands Charge Transport in Silicon Nitride due to Phonon-Assisted Trap Ionization, J. Appl. Phys. V. 96, N.8, p. 4293-4296, 2004.

79. V. A. Gritsenko, D. V. Gritsenko, Yu. N. Novikov, P. B. M. Kwok. I. Bello, Short Range Order, Large Scale Potential Fluctuations, and Photoluminescence in Amorphous SiNx, JETP, V. 98, N4, p. 760-769, 2004.

78. V. A. Gritsenko, K. A. Nasyrov, Yu. N. Novikov, A.L Aseev, New memory device for EEPROM, Embedded in High-k Dielectrics, Microelectronics, 32, N1, 36-42, 2003.

77. H. Wong, V. M. C. Poon, C. W. Kok, P. J. Chan, V. A. Gritsenko, Interface Structure of Ultrathin oxide Prepared by N2O Oxidation, IEEE Transaction on Electron Device, V. 50, N. 9. p. 1941-1945, 2003.

76. V. A. Gritsenko, K. A. Nasyrov, Yu. N. Novikov, A. L. Aseev, S. Y. Yoon, Jo-Won Lee, H.-H. Lee, C. W. Kim, A new low voltage fast SONOS memory with high-k dielectric, Solid-State Electronics, V. 47, p. 1651-1656 (2003).

75. V. A. Gritsenko, A. V. Shaposhnikov, W. M. Kwok, H. Wong, G. M. Zhidomirov, Valence band offset at silicon/silicon nitride and silicon nitride/silicon oxide interfaces , Thin Solid Films, V. 437, p. 135-139 (2003).

74. V. A. Gritsenko,A. V. Shaposhnikov, Yu. N. Novikov, A. P. Baraban, H. Wong, G. M. Zhidomirov, M. Roger, Onefold coordinated oxygen atom: an electron trap in silicon oxide, Microelectronics Reliability, V. 43, p. 665-669 (2003).

73. V. A. Gritsenko, K. A. Nasyrov, Yu. N. Novikov, A. L. Aseev, High-Permittivity_Insulator EEPROM Cell Using Al2O3 and ZrO2, Russian Microelectronics, V. 32, N. 2. p. 69-74 (2003).

72. V. A. Gritsenko, H. Wong, W. M. Kwok, J. B. Xu, Bonding and bands offset in N2O-grown oxynitride, J. Vac. Sci. Tech. V. 21, N. 1. p. 241-245 (2003).

71. K. A. Nasyrov, Yu. N. Novikov, V. A. Gritsenko, S. Y. Yoon, C. W. Kim, Multiphonon Ionization of Deep Centers in Amorphous Silicon Nitride: Experiment and Numerical Simulation, JETP Letters, V. 77, N. 7, p. 385-388 (2003).

70. H. Wong, V. A. Gritsenko, Defects in silicon oxynitride gate dielectric films, Microelectronics Reliability, V. 42, p. 597-605 (2002).

69. A. V. Shaposhnikov, V. A. Gritsenko, G. M. Zhidomirov, M. Roger, Hole capture on two-fold coordinated silicon atom in SiO2, Solid State Physics, v. 44, p. 985-987, 2002.

68. K. A. Nasyrov, V. A. Gritsenko, M. K. Kim, H. S. Chae, S. D. Chae, W. I. Ryu, J. H. Sok, J. W. Lee, B. M. Kim, Charge Transport Mechanism in Metal-Nitride-Oxide Silicon Structures, IEEE Electron Device Letters, V. 23, N. 6, p. 336-338, 2002.

67. V. A. Gritsenko, A. V. Shaposhnikov, G. M. Zhidomirov, M. Roger, Two fold coordinated silicon atom: an hole trap in SiO₂ , Solid State Communication, V. 121, 301-304, 2002.

66. V. A. Gritsenko, R. W. M. Kwok, H. Wong, J. B. Xu, Short-range order in non-stoichiometric amorphous silicon oxynitride and silicon-rich nitride, J. Non-Crystalline Solids, V. 297, p. 96-101, 2002.

65. V. A. Gritsenko, Yu. N. Novikov, A. V. Shaposhnikov, Yu. N. Morokov, Numerical Simulation of Intrinsic Defects in SiO₂ and Si₃N₄ , Semiconductors, V. 35, N. 9. p. 997-1005, 2001.

64. A. I Shames, V. A. Gritsenko, R. I. Samoilova, Yu. D/ Tzvetkov, L. S. Braginsky, M. Roger, EPR-study of nitrogen implanted silicon nitride, Solid State Communication, V, 118, p. 129-134, 2001.

63. S. Klauser, I. H. Hong, H. J. Su, T. T. Chen, S. Gwo, S. C. Wang, T. J. Chuang, V. A. Gritsenko, Oxidation states in scanning-probe-induced Si₃N₄ to SiO_x conversion studied by scanning photoemission microscopy, Appl. Phys. Lett. V. 79, N. 19, p.3143-3145, 2001.

62. V. A. Gritsenko, Yu. G. Shavalgin, P. A. Pundur, H. Wong and W. M. Kwok, Short-range order and luminescence in amorphous silicin oxinitride, Philosophical Magazine B, v.80, N 10, p.1857-1868, 2000.

61. V. A. Gritsenko, H. Wong, J. B. Xu, R. M. Kwok, I. P. Petrenko, B. A. Zaitsev, Yu. N. Morokov, Yu. N. Novikov, Comparative Study of Excess Silicon at the Silicon Nitride /Thermal Oxide Interface in Oxide-Nitride-Oxide Structures using SIMS, AES, and EELS, Journal of Applied Physics v.86, N6, 1999, p.3234-3238

60. V. A. Gritsenko, Yu. N. Morokov, Yu.N. Novikov, and H. Wong, Two-fold coordinated nitrogen atom as electron trap in MOS devices with silicon oxynitride gate dielectric, Microelectronics Engineering, v.48, p.175-178, 1999.

59. V. A. Gritsenko, K. S. Zhyravlev, A. D. Milov, and H. Wong, Silicon dots/clusters in silicon nitride: photoluminescence and electron spin resonance , Thin Solid Films v.353 p.20-24, 1999.

58. V. A. Gritsenko, Yu. G. Shavalgin, P. A. Pundur, H. Wong, and W. M. Lau, Cathodoluminescence and Photoluminescence of Amorphous Silicon Oxynitride, Microelectronics Reliability, v.39, p.715-718, 1999.

57. V. A. Gritsenko, S. N. Svitasheva, I. P. PetrenkoH. Wong, , J. B. Xu, and I. H. Wilson, Study of Excess Silicon at Si₃N₄/Thermal SiO₂ Interface Using EELS and Ellipsometric Measurements , Journal of The Electrochemical Society, V. 146, N.2, p. 780-785 (1999).

56.V. A. Gritsenko, J. B. Xu, I. H. Wilson, R. M. Kwok, Y.H. Ng, Short Range Order and Nature of Defects and Traps in Amorphous Silicon Oxinitride, Phys. Rev. Lett, v.81, N.5, 1054-1057, 1998.

55. V. A. Volodin, M. D. Efremov, V. A. Gritsenko, Raman Study of Silicon anocrystals in a-SiN_x Films by Eximer Laser or Thermal Annealing , Appl. Phys. Lett, v.73, N9, p.1212-1214, 1998.

54. V. A. Gritsenko, Yu. N. Morokov, Yu.N. Novikov, H. Wong, Simulation of electronic structure of Si-Si bond traps in oxide/nitride/oxide. Microelectronics Reliability, V.38, p. 1457-1464,1998.

53. V. A. Gritsenko, Yu.N. Morokov, Yu.N. Novikov, I.P. Petrenko, S.N.Svitasheva, Kwok, R. Chan, H. Wong, Characterization of the Silicon Nitride - Thermal Oxide Interface in ONO Structures by ELS Spectroscopy and Ellipsometry, Microelectronics Reliability, V. 38. P.745-751, 1998.

52. V. A. Gritsenko, E. E. Meerson, Yu. N. Morokov, Thermally Assisted Tunneling at Au -Si₃N₄ Interface and Energy Band Diagram of Metal- Nitride-Oxide - Semiconductor Structures, Phys. Rev. 1997,V. B 57, N.4, p.

51. V. A. Gritsenko, I. P. Petrenko, S.N.Svitasheva, H. Wong, Excess Silicon at the Si₃N₄/SiO₂ Interface, Appl. Phys. Lett. 1997, V. 72, N.4, p. 462-464.

50. V. A. Volodin, M. D. Efremov, V. A. Gritsenko, Raman Spectroscopy of Silicon Nanocrystals formation in silicon Nitride Films, Solid State Phenomena, 1997, V. 57/58, p.501-506.

49. V. A. Gritsenko, Yu. N. Morokov, Yu.N. Novikov, MINDO/3 calculation of the Electronic Structure of Silicon Nitride, Solid State Physics, (Engl. Transl.) 1997, V.39 N8, p.1191-1196.

48. V.A. Gritsenko, Yu.N. Morokov, Yu.N. Novikov, I.P. Petrenko, S.N.Svitasheva,

structures, Microelectronics Engineering, V.36. N.1-4, p.123-124, 1997.

47. V. A. Gritsenko, Yu. N. Morokov, Yu. N. Novikov. Electronic Structure of Amorphous Si₃N₄: Experiment and Numerical Simulation, Applied Surface Science, V. 113/114, p.417-421, 1997.

46. V. A. Gritsenko, Wigner Crystallization and Resonance Exchange Mechanism for Electron Localized in an Amorphous Insulator with a High Trap Density , Letters to Journal of Experimental and Theoretical Physics (Rus), V.64, N.7, p.525-530, 1996.

45. V. A. Gritsenko, A. D. Milov, Wigner Crystallization of Electrons and Holes in Amorphous Silicon Nitride, Antiferromagnetic Ordering of Localized electrons and Holes as a Result of Resonance Exchange Interaction , Letters to Journal of Experimental and Theoretical Physics (Rus), V.64, N.7, p.531-536, 1996.

44. V. A. Gritsenko, R. M. Ivanov, and Yu. N. Morokov, Electronic structure of Amorphous SiO₂: Experiment and Numerical Simulation, Journal of Experimental and Theoretical Physics (Rus), 1995, V.81, N.6, p.208-1216.

43. V. V. Vorontsov, V. A. Gritsenko, S. M. Kokorin, A. E. Plotnikov, V. I. Popov, V. P. Popov, M. S. Suhov, Structure and Electronic Structure of Doped by Oxygen and Phosphorus Polisilicon- Thermal Silicon Oxide Structures, Surface (Rus), 1993, N.6, p.45-53.

42. V. A. Gritsenko, Yu.P. Kostikov, and L.V. Khramova, Nature and electronic structure of Si-H and N-H bond in SiN_x:H, Sov. Phys. Solid State, 1992, V.34, N.8, p. 1300-1303.

41. I. I. Belousov, V. A. Gritsenko, V. M. Efimov, Electronic Structure and Conduction of SiO₂ Films Produced at 100C, Surface (Rus), 1992, N.10-11, p.62-67.

40. B. I. Vasil'ev, V. A. Gritsenko, and S.A. Kovtunenko, Memory Properties of Silicon Enriched Silicon Oxinitride, Nonorganic Materials (Rus), 1991, V.27, N.4, p.733-736.

39. V. P. Bolotin, I. A, Britov, V. A. Gritsenko, B. Z. Olshanezkii, V. P. Popov, Yu. N. Romashenko, V. G. Serjapin, S. A. Tiis, Composition and Structure of Enriched by Silicon Silicon Nitride, Sov. Phys. Dokl. 1990, V.310, N.1, p.114-117.

38. V. A. Gritsenko, E. E. Meerson, Monopolar and Bipolar Injection in MNOS Structures, Microelectronics (Sov), 1988, V.17, N.6, p.532-535.

37. V. A. Gritsenko, E. E. Meerson, Injection of Electrons and Holes from Metal in MNOS Structures, Microelectronics (Sov), 1988, V.17, N.3, p.249-255.

36. L. V.Chramova, T. P.Chusova, V. A.Gritsenko, G. N. Feofanov, T. P.Smirnova Chemical Compositional Changing and Absorbtion Edge Red Shift in Annealed Silicon Nitride, Nonorganic Materials (Sov), 1987, V.23, N.1, p.73-

35. V. A. Gritsenko, E. E. Meerson, I. V. Travkov, Yu. V. Goltvjanskii, Nonstationary Transport Of Electrons and Holes In The Depolarization Mode of MNOS Structures: Experiment and Numerical Simulation , Microelectronics (Sov), 1987, V.16, N.1, p.42-50.

34. G. V. Gadijak, V. A. Gritsenko, N. A. Romanov, I. V. Travkov, Monopolar Conduction of MNOS Structures Limited by Frenkel Effect, Microelectronics (Sov), 1987, V.16, N.1, p.51-56.

33. P. A. Pundur, Yu. G. Shavalgin, and V. A. Gritsenko, On the Nature of Deep Centers Responsible for the Memory Effect and Luminescence of a-SiN_x with x<4/3, Phys. Stat. Sol. 1986, V.A94, p.K107-K112.

32. V. A. Gritsenko, P. A. Pundur, Muliphonon Capturing and Radiative Transitions in a-Si₃N₄ , Sov. Physics Solid State, 1986, V.28, N.10, p.1829-1830.

31. V. A. Gritsenko, A. V. Rhzanov, S. P. Sinitsa, V. I. Fedchenko, G. N. Feofanov, Shift of the Absorbtion Edge in Irradiated Amorphous Silicon Nitride, Sov. Phys. Dokl. 1986, V.31, N.4, p.341-342.

30. I. A. Britov, V. A. Gritsenko, Yu. N. Romaschenko, Short-Range Order and Electronic Structure of Amorphous SiN_xO_y, Sov. Phys. JETP, 1985, V.62, N.2, p.321-327.

29. I. A. Britov, E. A. Obolenskii, Yu. N. Romaschenko, V. A. Gritsenko, Electronic Structure of Amorphous Si₃N₄, Journal De Physique, Colloque C2, 1984, Supplement aun 2, Tome 45, p. C2-887- C2 887.

28. V. A. Gritsenko, V. I. Koldjaev, Influence of Space Charge on MNOS Structures Conduction, Microelectronics (Sov), 1984, V.13, N.5, p.466-468.

27. I. A. Britov, V. A. Gritsenko, Yu. P. Kostikov, E. A. Obolenskii, Yu. N. Romaschenko, Electronic Structure of Amorphous Si₃N₄, Sov. Physics Solid State, 1984, V.26, N.6, p.1022-1025.

26. V. A. Gritsenko, E. E. Meerson, Influence of Silicon Nitride Thickness on the Charge Accumulation in MNOS Structures, Microelectronics (Sov), 1983, V.12, N.6, p.580-583.

25. V. A. Gritsenko, P. A. Pundur, Catodoluminescence of Amorphous Silicon Nitride, Sov. Physics Solid State, 1983, V.23, N5, p.1560-1562.

24. E. A. Galzova, V. A. Gritsenko, G. N. Dolenko, Yu. P. Kostikov, H. D. Lamajapov, K. P. Mogilnikov, S. N. Nesterova, S. P. Sinitsa, Photoelectron Spectra and Intrinsic Absorbtion of SiO_x Produced by Chemical Vapor Deposition, Nonorganic Materials (Sov), 1983, V.19, N.3, p.764-769.

23. V. A. Gritsenko, Yu. P.Kostikov, S. P. Sinitsa, Photoelectron Spectra of Amorphous Silicon Oxinitride Films, Nonorganic Materials (Sov), 1983, V.19, N.3, p.408-410.

22. V. A. Gritsenko, Ja. O. Roisin, N. L. Schwarz, Semiconductor-Metal Transition due to Deep Centers Interaction in Tungsten Oxide Films, Solid State Communication, 1981, V.38, p.351-352.

21. V. A. Gritsenko, Yu. P. Kostikov, N. A. Romanov, SiO_x as a Model Medium with Large-Scale Potential Fluctuation , Letters to Journal Experimental and Theoretical Physics, 1981, V.34, N.1, p.3-6.

20. V. A. Gritsenko, E. E. Meerson, K. P. Mogilnikov, S. P. Sinitsa, High-Fiel Conductivity of Amorphous Insulator Films, Phys. Stat. Sol. 1979, V.A52, p.47-57.

19. V. A. Gritsenko, E. E. Meerson, Ja. O. Roisin, K. K. Svitashev, Metal -Nonmetal Transition in Tungsten Oxide Films by Colering, Avtometry, (Sov), 1979, N.2, p.55-59.

18. V. A. Gritsenko, N. D. Dikovskaja, K. P. Mogilnikov, Band Diagram and Conductivity of Silicon Oxinitride Films, Thin Solid Films, 1978, V.51, p.353-357.

17. A. S. Ginovker, V. A. Gritsenko, N. D. Dikovskaja, K. P. Mogilnikov, Optical and Electrical Properties of Silicon Oxinitride Films, Electronic Technics, ser. Materials (Sov), 1978, N.7, p.27-33.

16. V. A. Gritsenko, E. E. Meerson, On Silicon Nitride Conductivity, Phys. Stat. Sol. 1978, V.A62, p.K131-K134.

15. V. A. Gritsenko, E. E. Meerson, S. P. Sinitsa, Unsteady Silicon Nitride Conductivity in High Electric Fields, Phys. Stat. Sol. 1978, V.A48, p.31-37.

14. V. A. Gritsenko, K. P. Mogilnikov, Photoemission in MIS Structures from Semiconductor Space Charge, Physics and Technics of Semiconductors (Sov), 1978, V.13, N.10, p.1996-1998.

13. V. A. Gritsenko, K. P. Mogilnikov, Electron Photoemission and Band Diagram of Silicon, Letters to Journal of Technical Physics (Sov), 1978, V.4, N.5, p.287-300.

12. V. A. Gritsenko, K. P. Mogilnikov, A. V. Rhzanov, Anomalous Scattering of Electrons in Amorphous Film, Letteres to Journal of Experimental and Theoretical Physics (Sov), 1978, V.27, N.7, p.375-378.

11. V. A. Gritsenko, E. E. Meerson, K. P. Mogilnikov, S. P. Sinitsa, On the Silicon Nitride Conductivity in High Electric Fields, Phys. Stat. Sol. 1977, V.A44, p.K167-K170.

10. V. A. Gritsenko, V. Loipert, K. P. Mogilnikov, Charging of MNOS Structures by Illumination, Phys. Stat. Sol. 1976, V.A38, p.K57-K59.

9. V. V. Voskoboinikov, V. A. Gritsenko, B. N. Zaizev, S. P. Sinitsa, F. L. Edelman, Properties of Doped by Silicon Amorphous Silicon Nitride, Microelectronics (Sov), 1976, V.5, N.4, p.369-372.

8. V. V. Voskoboinikov, V. A. Gritsenko, V. M. Efimov, V. E. Lesnikovskaja, and F.L. Edelman, Structure and Electrical Properties of Boron Nitride Films, Phys. Stat. Sol. 1976, V.A24, p.85-94.

7. V. V. Voskoboinikov, V. A. Gritsenko, N. D. Dikovskaja, F.L. Edelman, Structure, Optical, Electrical Properties of Silicon Nitride Films with Exces Silicon, Thin Solid Films, 1976, V.32, p.339-342.

6. V. A. Gritsenko, Conduction of Amorphous Germanium Nitride Films in High Electric Field, Phys. Stat. Sol. 1976, V.28, N.1, p.387-393.

5. V. A. Gritsenko, V. A. Kolosanov, Influence of Tetraoxysylane Temperature on the Properties of Pirolitic Silicon Oxide Films, Electronic Technics (Sov), 1975, p.82-86.

4. V. A. Gritsenko, A. V. Rhzanov, Kinetic of Noneqilibreum Processes Formed by Frenkel Effect in High Electric Fields, Journal of Technical Physics (Sov), 1975, V.46, N.10, p.2155-2158.

3. V. A. Gritsenko, V. B. Zinovjev, N. B. Pridachin, Influence of Ion Implantation on Conduction of Amorphous Silicon Nitride, Microelectronics (Sov), 1975, V.5, N.2, p.170-175.

2. A. S. Ginovker, V. A. Gritsenko, S. P. Sinitsa, Two Band Conduction of Amorphous Silicon Nitride , Phys. Stat. Sol. 1974, V.B26, N.2, p.489-495.

1. A. S. Ginovker, V. A. Gritsenko, S. P. Sinitsa, Stationary Current in MNOS Structures, Microelectronics (Sov), 1973, V.2, N.4, p.283-289.