Proposals for Collaboration from Institute of Semiconductor Physics, Novosibirsk, Russia
Atomic and
electronic structure of high-k dielectrics, such as HfO2, Al2O3,
(Al2O3)x(HfO2)y,
(Al2O3)x(TiO2)y, ZrO2,
Ta2O5, TiO2 etc.
Atomic
structure by EXAFS, XPS.
Electronic
structure by XPS, quantum-chemical calculations.
Electronic
structure of defects and traps in dielectrics by XPS, luminescence and quantum
chemical calculations.
Charge transport mechanism,
experiment, comparison with Frenkel model and multi-phonon model. Determination of trap energy,
concentration, cross-section, electron and hole effective
mass.
Development of
SONOS/TANOS flash memory: experiment and simulation of write\erase, retention.
Resistive RAM: Current-voltage characteristic simulation with multi-phonon
model.
FeRAM, Electronic
structure and transport properties.
Dr. V. A. Gritsenko PhD, DSci
Head of research group on dielectrics
physics and flash memory
Institute of Semiconductor Physics
Siberian Branch of Russian Academy of
Sciences
13, Lavrentieva Ave.
630090, Novosibirsk, Russia
Tel: +7 383 330 88 91, fax:
+7 383 333 27 71
E-mail: grits@isp.nsc.ru