PROCEEDINGS OF CONFERENCES:

 

126. V.A. Gritsenko, The charge transport mechanism and the trap nature in ReRAM, FeRAM and charge trap flash memory devices, 7th Annual World Congress of Nano Science and Technology in Fukuoka, Japan (from October 24th to 26th, 2017). Устный

 

125. Д.Р. Исламов, В.А. Гриценко, Т.В. Перевалов, О.М. Орлов, Г.Я. Красников, Индуцированные токи утечки и механизм транспорта заряда в термическом оксиде кремния, XIV Международная конференция «Физика диэлектриков (Диэлектрики-2017)», Санкт-Петербург, 29.05-02.06.2017, тезисы: стр. 66, труды Материалы XIV Международной конференции, Т. 1. 2017. ISBN: 978-58064-2373-4: стр. 66-68. (устный).

 

124. Д.Р. Исламов, А.А. Гисматулин, В.А. Гриценко, М.С. Лебедев, Определение концентрации дефектов в тонких плёнках оксида гафния, синтезированных различными методами атомно-слоевого осаждения, XIV Международная конференция «Физика диэлектриков (Диэлектрики-2017)», Санкт-Петербург, 29.05-02.06.2017, тезисы: стр. 218, труды Материалы XIV Международной конференции, Т. 1. 2017. ISBN: 978-58064-2373-4: стр. 218-220. (устный).

 

123. В.А. Гриценко, Природа ловушек ответственных за транспорт заряда и локализацию в флэш приборах памяти, XIV Международная конференция «Физика диэлектриков (Диэлектрики-2017)», Санкт-Петербург, 29.05-02.06.2017, тезисы: стр. 14, труды Материалы XIV Международной конференции, Т. 1. 2017. ISBN: 978-58064-2373-4: стр. 14-16. (пленарный).

 

122.  D.R. Islamov, A.A. Pil’nik, A.A. Chernov, T.V. Perevalov, V.A. Gritsenko, Nonlinear full-coupled dynamic memristor switching model, Symposium “H.2. Memristive Devices - from Fundamentals to Applications”, XXVI International Materials Research Congress (IMRC 2017), Cancún, México, August 20-25, 2017, тезисы: https://www.mrs-mexico.org.mx/imrc2017/app_abstract-pdf.php?id_res=01025. (устный).

 

121.  V.A. Gritsenko, The nature of electron and hole traps responsible for charge transport in RERAM devices, Symposium “H.2. Memristive Devices - from Fundamentals to Applications”, XXVI International Materials Research Congress (IMRC 2017), Cancún, México, August 20-25, 2017, тезисы: https://www.mrs-mexico.org.mx/imrc2017/app_abstract-pdf.php?id_res=00239. (устный).

 

120. D.R. Islamov, V.A. Gritsenko, M.S. Lebedev, Determination of Trap Density in Hafnium Oxide Films Produced by Different Atomic Layer Deposition Techniques, The 232th ECS Meeting, National Harbor, MD, October 1-5, 2017, тезисы: ECS Meeting Abstracts, Vol. MA2017-02: стр. 847. http://ma.ecsdl.org/content/MA2017-02/14/847.abstract, труды ECS Transactions, 2017, v. 80, iss. 1: стр. 265-270. DOI:10.1149/08001.0265ecst (устный).

 

119.  D.R. Islamov, O.M. Orlov, V.A. Gritsenko, G. Ja. Krasnikov, The Charge Trap Density Evolution in Wake-up and Fatigue Modes of FRAM, The 232th ECS Meeting, National Harbor, MD, October 1-5, 2017, тезисы: ECS Meeting Abstracts, Vol. MA2017-02: стр. 847. http://ma.ecsdl.org/content/MA2017-02/14/849.abstract, труды ECS Transactions, 2017, v. 80, iss. 1: стр. 279-281. DOI:10.1149/08001.0279ecst (устный).

 

118. D.R. Islamov, V.A. Gritsenko, T.V. Perevalov, O.M. Orlov, G. Ya. Krasnikov, Charge transport and stress induced leakage current in thermal oxide on silicon, 20th Conference ‘Insulating Films on Semiconductors’ (INFOS 2017), Potsdam, Германия, 27-30.06.2017. (стенд).

 

117. D.R. Islamov, V.A. Gritsenko, M.S. Lebedev, Determination of trap density in hafnia films produced by two atomic layer deposition techniques, 20th Conference ‘Insulating Films on Semiconductors’ (INFOS 2017), Potsdam, Германия, 27-30.06.2017, труды Microelectronic Engineering, 2017, v. 178: стр. 104-107. http://dx.doi.org/10.1016/j.mee.2017.05.004. (стенд).

 

116. D.R. Islamov, V.A. Gritsenko, A. Gismatulin, M.S. Lebedev, Influence of ALD Synthesis Conditions on the Trap Density in Thin Films of Hafnium Oxide, Nano and Giga Challenges in Electronics, Photonics and Renewable Energy (NGC 2017), Томск, 18-22 сентября 2017, тезисы: https://nanoandgiga.com/ngc2017/abstract.php?id=20170517061559. (устный).

 

115. D.R. Islamov, A.A. Pil’nik, A.A. Chernov, T.V. Perevalov, V.A. Gritsenko, Nonlinear full-coupled dynamic RRAM switching model, Nano and Giga Challenges in Electronics, Photonics and Renewable Energy (NGC 2017), Томск, 18-22 сентября 2017, тезисы: https://nanoandgiga.com/ngc2017/abstract.php?id=20170518012144. (стенд).

 

114. D.R. Islamov, O.M. Orlov, V.A. Gritsenko, G.Ja. Krasnikov, Trap Density Evolution in FRAM: from Wake-up to Fatigue, Nano and Giga Challenges in Electronics, Photonics and Renewable Energy (NGC 2017), Томск, 18-22 сентября 2017, тезисы: https://nanoandgiga.com/ngc2017/abstract.php?id=20170518125635. (стенд).

 

113.  V.A. Gritsenko, The Charge Transport Mechanism and the Nature of Traps in Charge Trap Flash, ReRAM and FeRAM Devices, Nano and Giga Challenges in Electronics, Photonics and Renewable Energy (NGC 2017), Томск, 18-22 сентября 2017, тезисы: https://nanoandgiga.com/ngc2017/abstract.php?id=20170512021309. (приглашенный).

 

122. A.A. Gismatulin, V.A. Voronkovsky, T.V. Perevalov, V.A. Gritsenko, V.Sh. Aliev, Charge transport mechanism in tantalum oxide TaOx, Nano and Giga Challenges in Electronics, Photonics and Renewable Energy (NGC 2017), Томск, 18-22 сентября 2017, тезисы: https://nanoandgiga.com/ngc2017/abstract.php?id=20170911114938. (стенд).

 

111. T.V. Perevalov, V.A. Gritsenko, V.N. Kruchinin, V.Sh. Aliev, V.A. Pustovarov, I.A. Prosvirin, Electronic structure of oxygen deficient nonstoichiometric tantalum oxide, Nano and Giga Challenges in Electronics, Photonics and Renewable Energy (NGC 2017), Томск, 18-22 сентября 2017, тезисы: https://nanoandgiga.com/ngc2017/abstract.php?id=20170516022913. (стенд).

110. O. M. Orlov,  G. Ya. Krasnikov, D. R Islamov, V. A. Gritsenko, T. V. Perevalov , Stress induced leakage current in thin thermal silicon oxide, 3rd Int'l Conference on Semiconductor Physics and Devices (ICSPD 2017) January 3 to 5, 2017 in Bangkok, Thailand.

 109. V.A. Gritsenko, The Origin of Traps Responsible for Localization and Charge Transport in Memory Devices, 230th ECS Meeting, Honolulu, Hawaii, USA, October 2-7, 2016

108.T.V. Perevalov, V.A. Gritsenko, D.R. Islamov, and A.A. Saraev, Electronic Structure of Oxygen Deficient Noncentrosymmetric Orthorhombic Hf0.5Zr0.5O2, 230th ECS Meeting, Honolulu, Hawaii, USA, October 2-7, 2016

107.D.R. Islamov, A.G. Chernikova, M.G. Kozodaev, T.V. Perevalov, V.A. Gritsenko, O.M. Orlov, and A.M. Markeev, Leakage Currents Mechanism in Thin Films of Ferroelectric Hf0.5Zr0.5O2, 230th ECS Meeting, Honolulu, Hawaii, USA, October 2-7, 2016

 

106. A.A. Chernov, D.R. Islamov, A.A. Pil'nik, T.V. Perevalov, and V.A. Gritsenko, Three-Dimensional Non-Linear Complex Model of Dynamic Memristor Switching,

105.  D.R. Islamov, V.A. Gritsenko, T.V. Perevalov, O.M. Orlov, and G.J. Krasnikov, Charge Transport Mechanism of Stress Induced Leakage Current in Thermal Silicon Oxide, 230th ECS Meeting, Honolulu, Hawaii, USA, October 2-7, 2016

 

104.T.V. Perevalov, V.A. Gritsenko, D.R. Islamov, Electronic structure of the oxygen vacancy in noncentrosymmetric orthorhombic Hf0.5Zr0.5O2, 33rd International Conference on the Physics of Semiconductors (ICPS2016), Beijing, China, 31 July – 5 August 2016, p. 468,

 

103. D.R. Islamov, V.A. Gritsenko, T.V. Perevalov, O.M. Orlov, G.Ya. Krasnikov, Mechanism of charge transport of stress induced leakage current and trap nature in thermal oxide on silicon, 33rd International Conference on the Physics of Semiconductors (ICPS2016), Beijing, China, 31 July – 5 August 2016, p. 86

 

102.D.R. Islamov, A.G. Chernikova, M.G. Kozodaev, A.M. Markeev, T.V. Perevalov, V.A. Gritsenko, O.M. Orlov, Leakage Currents Mechanism in Thin Films of Ferroelectric Hf0.5Zr0.5O2, 33rd International Conference on the Physics of Semiconductors (ICPS2016), Beijing, China, 31 July – 5 August 2016, p. 445

 

101.Д.Р. Исламов, А.Г. Черникова, М.Г. Козодаев, А.М. Маркеев, Т.В. Перевалов, В.А. Гриценко, О.М. Орлов, Г.Я. Красников. Механизм транспорта токов утечки в аморфных и сегнетоэлектрических плёнках Hf0.5Zr0.5O2, XI Конференция и X Школа молодых учёных и специалистов по актуальным проблемам физики, материаловедения, технологии диагностики кремния, нанометровых структур и приборов на его основе «Кремний 2016», Новосибирск 12-15 сентября, стр. 54,

 

100.Д.Р. Исламов, В.А. Гриценко, Т.В. Перевалов, О.М. Орлов, Г.Я. Красников. Механизм транспорта электрически-индуцированных токов утечки и природа электронных ловушек в термическом оксиде кремния, XI Конференция и X Школа молодых учёных и специалистов по актуальным проблемам физики, материаловедения, технологии диагностики кремния, нанометровых структур и приборов на его основе «Кремний 2016», Новосибирск 12-15 сентября, стр. 110,

 

99.Т.В. Перевалов, В.А. Гриценко, Д.Р. Исламов. Электронная структура вакансий кислорода в сегнетоэлектрической фазе Hf0.5Zr0.5O2, XI Конференция и X Школа молодых учёных и специалистов по актуальным проблемам физики, материаловедения, технологии диагностики кремния, нанометровых структур и приборов на его основе «Кремний 2016», Новосибирск 12-15 сентября, стр. 140,

 

98.Д.Р. Исламов, А.А. Чернов, А.А. Пильник, Т.В. Перевалов, В.А. Гриценко,  Трёхмерная нелинейная полносвязная динамическая модель переключения мемристора, XI Конференция и X Школа молодых учёных и специалистов по актуальным проблемам физики, материаловедения, технологии диагностики кремния, нанометровых структур и приборов на его основе «Кремний 2016», Новосибирск 12-15 сентября, стр. 145,

 

97. V.A. Gritsenko, T.V. Perevalov, Nanoscale Potential Fluctuation in Non-Stoichiometric HfOx and Low Resistive Transport in RRAM, Oral report,  Insulating Films on Semiconductors, INFOS-2015, Italy, Udine June 29- July 2, 2015  

96. The Influence of Defects on the Electronic Properties of Hafnia D. R. Islamov, V. A. Gritsenko, and T. V. Perevalov, Invited talk, 228th EC Meeting, Phoenics,  “Semiconductors, Dielectrics, and Metals for Nanoelectronics “, 228th ECS Meeting, 7-11 October, Phoenics, USA 2015.

95. O. M. Orlov,  G. Ya. Krasnikov, V. A. Gritsenko, V. N. Kruchinin, T. V. Perevalov, V. Sh. Aliev, D. R. Islamov,  and I. P. Prosvirin, Nanoscale Potential Fluctuation in Non-Stoichiometric Hafnium Suboxides, ECS Transactions, 69 (5), 237-241, 2015.

94. V.A. Gritsenko, The nature of electron and hole traps responsible for localization and charge transport in high-k dielectrics, Invited talk, in International workshop Atomic Layer Deposition Russia 2015 (ALD Russia 2015)

 

93. В.А. Гриценко, «Механизмы переноса электронов и дырок в неорганических диэлектрических пленках», Материалы XIII Международной конференции "Физика диэлектриков" (Диэлектрики-2014), Том 1, стр.6-8, Санкт-Петербург, 02-06 июня 2014, РГПУ им. А.И. Герцена.

 

 

93. Т.В. Перевалов, В.А. Гриценко, А.А. Сараев, В.В. Каичев, «Электронная структура кислородных вакансий в Al2O3 HfO2, TiO2 и Ta2O5: ab initio моделирование и фотоэлектронная спектроскопия», Материалы XIII Международной конференции "Физика диэлектриков" (Диэлектрики-2014), Том 2, стр.111-113, Санкт-Петербург, 02-06 июня 2014, РГПУ им. А.И. Герцена.

92. Damir R. Islamov, T.V . Perevalov, V.Sh. Aliev, V.A. Gritsenko, A.A. Saraev, V.V. Kaichev, E.V. Ivanova, M.V. Zamoryanskaya, C.H. Cheng,  A. Chin, Origin of defects responsible for charge transport in HfO2, – 32th International Conference on Physics of Semiconductors (ICPS2014) – Austin, Texas, US, August 10-15, 2014, p. 28.

91. Damir R. Islamov, V . A. Gritsenko, C. H. Cheng, A. Chin, Percolation transport of low resistive state in HfO2-based resistive memory, – 32th International Conference on Physics of Semiconductors (ICPS2014) – Austin, Texas, US, August 10-15, 2014, p. 28.

90c. T.V. Perevalov, V.Sh. Aliev, V.A. Gritsenko, A.A. Saraev, V.V. Kaichev  "Electronic structure of oxygen vacancies in hafnium oxide".  Insulating Films on Semiconductors, INFOS 2013, Krakov, Poland, June 20-26, 2013.

89c. В.А. Гриценко, Новое поколение ФЛЭШ памяти: быстродействующая резистивная память, Устный доклад на ХI Российской конференции по физике полупроводников, Санкт-Петербург, 16-20 сентября, 2013.

88c. Т.В. Перевалов, В.А. Гриценко, А.А. Сараев, В.В. Каичев, Электронная структура кислородных вакансий в оксиде титана, Стендовый доклад на ХI Российской конференции по физике полупроводников, Санкт-Петербург, 16-20 сентября, 2013.

87c. D.R. Islamov, T.V. Perevalov, V.A. Gritsenko, C.H. Cheng, and A. Chin, Resistive Memory Switching and Charge Transport Mechanism in HfO2, Thesysis of &th International Workshop ”Functional Nanomaterials and Devices”, p. 81-82. 8-11 April 2013, Kyiv, Ukraine

86c. V.A. Gritsenko, Electronic Properties of TANOS Flash Memory, Invited talk at International Conference “Nano and Giga Challenges in Electronics, Photonics and Renewable Energy”, Moscow, September 12-16, 2011.

 

85c. V.A. Gritsenko, Electronic Properties of Flash Memory Based on High-k Dielectrics, Invited Talk, 12th Internation Conference on Dielectrics Physics (Dielectrics -2011), May 23-26, 2011, Sanсt-Petersburg, Russia.

В.А. Гриценко, Электронные Свойства Флэш Памяти на Основе Диэлектриков с Высокой Диэлектрической Проницаемостью, Приглашенный доклад, Двенадцатая Международная конференция "Физика диэлектриков" (Диэлектрики-2011), 23-26 мая 2011 года, Санкт-Петербург, Россия

 

 

84c. T.V. Perevalov, M.V. Ivanov, V.A. Gritsenko Electronic and optical properties of hafnia polymorphs 17th Conference on "Insulating Films on Semiconductors" 21-24 June 2011 Grenoble – France
  
83c. Yu.N. Novikov, V.A. Gritsenko, Structure of SiOx: Photoelectron Spectroscopy and Numerical Simulation, 12th Internation Conference on Dielectrics Physics (Dielectrics -2011), May 23-26, 2011, Sankt-Petersburg, Russia.

Ю.Н. Новиков, В.А. Гриценко Строение SiOx по данным фотоэлектронной спектроскопии: эксперимент  и численное моделирование, Двенадцатая Международная конференция "Физика диэлектриков" (Диэлектрики-2011), 23-26 мая 2011 года, Санкт-Петербуре, Россия

 

                                              

82c. T.V. Perevalov, M.V. Ivanov, V.A. Gritsenko, Electronic and Optical Properties of HfO2 with Quantum-Chemical Simulation, 12th Internation Conference on Dielectrics Physics (Dielectrics -2011), May 23-26, 2011, Sankt-Petersburg, Russia.

 Т.В.Перевалов, М.В Иванов, В.А Гриценко, Электронные и оптические свойства HfO2 по данным квантово-химического моделирования, Двенадцатая Международная конференция "Физика диэлектриков" (Диэлектрики-2011), 23-26 мая 2011 года, Санкт-Петербург, Россия

 

81c. T.V. Perevalov, V.A. Gritsenko, Electronic Structure of Oxygen Vacancy and Poly-Vacancy in α- and β-Al2O3, 27th International Conference on Microelectronics (MIEL 2010) NIS, Serbia, 16-19 May, 2010

 

80c. Yu.N. Novikov, V.A. Gritsenko, X-ray Photoelectron Spectroscopy of Short-Range Order in Amorphous SiOx, p. 86, 16th Workshops on Dielectrics in Microelectronics, WODIM 2010, June 28-30, 2010 Bratislava, Slovakia.

 

79c. Yu.N. Novikov, V.A. Gritsenko, K.A. Nasyrov, Optimization of the dielectric constant of a blocking dielectric in the FLASH memory based on Si3N4 and silicon nanoclusters, p. 145, 16th Workshops on Dielectrics in Microelectronics, WODIM 2010, June 28-30, 2010 Bratislava, Slovakia.

78с. T.V. Perevalov, A.V. Shaposhnikov, V.A. Gritsenko, Electronic structure of bulk and defects alfa- and gamma-Al2O3, Insulating Films on Semiconductors , Cambrige University, United Kingdom, 28June-1July, 2009

 

77с. S.S. Nekrashevich, V.V. Vasilev,A.V. Shaposhnikov, V.A. Gritsenko, Устный доклад на международной конференции, Electronic structure of memory traps in silicon nitride, Insulating Films on Semiconductors , Cambrige University, United Kingdom, 28June-1July, 2009

 

76с. В.А. Гриценко, Новое поколение флэш памяти на основе high-k диэлектриков, IX Российская конференция по физике полупроводников, Новосибирск - Томск, 28 сентября - 3 октября, 2009

 

75с. В.А., Гриценко “ ФЛЭШ ПАМЯТЬ НА ОСНОВЕ HIGH-K ДИЭЛЕКТРИКОВ”. Одиннадцатая международная  конференция  ФИЗИКА ДИЭЛЕКТРИКОВ (ДИЭЛЕКТРИКИ - 2008). Секционный доклад, Санкт-Петербург, 3-7 июня 2008 г.

 

74с. Ю.Н. Новиков, А.В. Вишняков, В.А Гриценко, К.А Насыров.“Перенос заряда в оксиде алюминия: многофононный механизм”. Одиннадцатая международная  конференция "ФИЗИКА ДИЭЛЕКТРИКОВ" (ДИЭЛЕКТРИКИ - 2008). Секционный доклад. Санкт-Петербург, 3-7 июня 2008 г.

 

73с. Т.В. Перевалов, А.В. Шапошников, В.А.Гриценко, “ЭЛЕКТРОННАЯ СТРУКТУРА ОБЪЁМА И ДЕФЕКТОВ В α-Al2O3” Одиннадцатая международная  конференция  ФИЗИКА ДИЭЛЕКТРИКОВ (ДИЭЛЕКТРИКИ - 2008).. Стендовый доклад. Санкт-Петербург, 3-7 июня 2008 г.

 

72с. Международная конференция, A.A. Rastorguev, V.I. Belyi, T.P. Smirnova, L.V. Yakovkina, V.A. Gritsenko, M.V. Zamorynskaya,H. Wong. “Luminescence of the intrinsic and extrinsic defects in hafnia films”,Тhe Third China-Russia Joint Workshop on Advanced Semiconductor Materials and Devices” 27 – 29 April 2008, Institute of semiconductor CAS, Beijing, China. Секционный доклад.

 

 

71c. V. A. Gritsenko, V.  A. Nadolinny, E. N. Vandyshev, K. S. Zhuravlev, J. B. Xu, H. Wong, C. W. Kim, Electron Spin Resonamce and Quantum Confinement in 29-Si implanted SiO2, Thesis of Asia-Pacific EPR/ESR symposium, p.106,  August 24-27, 2007, Novosibirsk, Russia

70c. В.А. Гриценко, К.А. Насыров, С. С. Шаймеев, ФЛЭШ память на основе диэлектриков с высокой диэлектрической проницаемостью, IV Российское совешание по росту кристаллов, с. 88, Красноярск, 4-6 Мая, 2006.

69c. V.A. Gritsenko, A.V. Shaposhnikov, T.V. Perevalov, V.M. Tapilin, K.A. Nasyrov, K. Kukli, H. Wong, C.W. Kim, Electronic Structure of ZrO2 and HfO2, Invated presentation in NATO Advanced Research Workshop Defects in Advanced High-k Dielectrics Nano-Electronic Semiconductor Devices, July 11-14, St. Petersburg, Russia, 2005.

68c. A.V. Shaposhnikov, V.A. Gritsenko, V.G. Lifshiz, Electronic Structure of Gd2O3 from Fist-Principle Calculation, Pros. of NATO Advanced Research Workshop Defects in Advanced High-k Dielectrics Nano-Electronic Semiconductor Devices, July 11-14, St. Petersburg, Russia, 2005.

67c. D.V. Gritsenko, S.S. Shaimeev, V.V. Atuchin, K.A. Nasyrov, V.G. Lifshits, Two Band Chatge Transport in Si/TiO2/Al Structures, Pros. of NATO Advanced Research Workshop Defects in Advanced High-k Dielectrics Nano-Electronic Semiconductor Devices, July 11-14, St. Petersburg, Russia, 2005..

 

66c. V.A. Gritsenko, K.A. Nasyrov, Novell flash device based on high-k dielectrics, Pros. Of International Conference Micro-and nanoelectronics, October 3-7, 2005, Moscow, Zvenigorod, Russia.

65c. B. M. Ayupov, V. A. Gritsenko, Refractive Index Determination of Very Thin Films by Ellipsometry,  Pros. Of XIV Conference devited to Akademishion A. V. Nikolaev, 27-30 Dec, 2004, Novosibirsk, Russia.

64c. V. A. Gritsenko, K. A. Nasyrov, D. V. Gritsenko, yu. N. Novikov, J.-W. Lee, C. W. Kim, Novell EEPROM device, based on silicon quantum dots embedded in high-k dielectric. Nano and Giga Challenges in Microelectronics. Research and Development Opportunities. Symposium and Summer school, Cracow. Poland, September 13-17, 2004.

63c. A. V. Shaposhnikov, V, A. Gritsenko, Electronic Structure of Silicon Nitride and Oxide: Experiment and ab-initio Simulation, Nano and Giga Challenges in Microelectronics. Research and Development Opportunities. Symposium and Summer school, Cracow. Poland, September 13-17, 2004.

62c. V. A. Gritsenko, S. S. Shaimeev, D. V. Gritsenko, K. A. Nasyrov, S. Erenburg, V. M. Tapilin, H. Wong, J.-W. Lee, C. W. Kim, Atomic, Electronic Structuyre and Charge Transport in Amorphous ZrO2 and HfO2 Films, Pros. Nano and Giga Challenges in Microelectronics. Research and Development Opportunities. Symposium and Summer school, Cracow. Poland, September 13-17, 2004.

61c. V. A. Gritsenko, SONOS FLASH Based on High-k Dielectric, Invited Tolk, 2003 IEEE Hong Kong Electron Device Meeting, October 30, 2003, Hong Kong.

60c. V. A, Gritsenko, K. A. Nasyrov, Atomic, Electronic Structure and Charge Transport in Silicon Nitride of Different Compositions, The Electrochemical Society  Proceedings “Silicon Nitride and Silicon Dioxide Thin Insulating Films VI”, Volume 2003-02 p.507-516, Pennington, NJ. USA, 2003.

59c. V. A. Gritsenko, K. A. Nasyrov, Yu. N. Novikov, A New Low Voltage Fast SONOS Memory with High-k Dielectrics, Proceedings of 12 Workshop on Dielectrics in Microelectronics (WODIM), November 18-20, Grenoble, France, 2002, p. 179-181.

58c. V. A. Gritsenko, H. Wong, K. A. Nasyrov,  Defect Atomic Structure and Charge Transport Mechanism in Non-Stoichiometric Silicon Nitride, Proceedings of 12 Workshop on Dielectrics in Microelectronics (WODIM), November 18-20, Grenoble, France, 2002, p. 143-145.

57c. V. A. Gritsenko, K. A. Nasyrov, Thesis’s of Conference “Nano and Giga Challenges in Mictroelectronics Research and Opportunities in Russia”, Transport and defects in advanced gate dielectrics, September 10-13, 2002, Moscow, p. 131.

56c. V. A. Gritsenko, Charge Transport Mechanism in Silicon Nitride, Thesis’s of Conference “Grows, Defects, in Silicon and Films, Silicon-2002, July 9-12, 2002, Novosibirsk, Russia.”

 

55c I. P Petrenko, V. A. Gritsenko, L. M. Logvinsky, and H. Wong, Influence of Low-Energy Argon Bombardment and Vacuum Annealing on the Silicon Nitride Surface Properties, Pros. 199th Electrochemical Sosiety Meeting, Washington, USA, 25-30 March, 2001.

 

54c. V. A. Gritsenko, Yu. N. Morokov, Yu. N. Novikov, Atomic and Electronic Structure of Defects Responsible for Electrons and Hole Localization in Dielectrics of MOS and SOI Structures, Abstr. 4th. Russian Conference on the Semiconductor Physics, p. 83, 25-29 Oct, 1999, Novosibirsk, Russia

 

53c. V. A. Gritsenko, I. P. Petrenko, L. M. Logvinski, Surface Modification of Si3N4 by Low Energy Argon Ion Bombardment and Annealing: Soft XPPS, AES and ELS study, Abst. 8th European Conference of Surface and Interface Analysis, 4-8 October, 1999, Sevilla, Spane.

 

52c. Yu. N. Morokov, Yu. N. Novikov,  V. A. Gritsenko, Two fold coordinated   nitrogen atom an electron trap in MOS devices with silicon oxynitride gate  dielectric, Thesises of INFOS 99 (Insulating Films on Semiconductors), June 16-19, Nurnberg, Germany, 1999.

 

51c. V. A. Gritsenko, J. B. Xu, I. H. Wilson, Y. H. Ng, R.W. M. Kwok, Short Range  Order and Large scale Potential Fluctuations in a-SiNx,  Thesises of the 1999 Spring MRS, Symposium R, Ultrathin SiO2 and High-K materials for ULSI Gate Dielectics, p. 227, April 5-8, 1999, San Francisco,  USA.  

 

50c. V. A. Gritsenko, J. B. Xu, Y. H. Ng, R.W. M. Kwok, I. H. Wilson, Random  Bonding Model for the Short Range Order in Amorphous Silicon  Oxinitride,  Thesises of the 1999 Spring MRS, Symposium R, Ultrathin SiO2 and High-K materials for ULSI Gate Dielectics, p. 227, April 5-8, 1999, San Francisco, USA.  

 

49c. V. A. Gritsenko, Yu. N. Morokov, Yu.N. Novikov,   J. B. Xu, Capturing  Properties of Two-Fold Coordinated  Nitrogen Atom in Silicon  Oxynitride,         Thesises of the 1999 Spring MRS, Symposium R, Ultrathin SiO2 and High-K materials for ULSI Gate Dielectics, p. 227, April 5-8, 1999, San Francisco, USA.  

 

48c. V. A. Gritsenko,  J. B. Xu, I. H. Wilson, R.W. M. Kwok, Y. H. Ng,  Short Order, Electronic Structure, Defects and Traps in Amorphous Silicon Oxinitride ,  Thesises of the 45th International Symposium, Vacuum, Thin Films, Surface/Interface and Proceedings, p.98, November 2-6, 1998, Baltimore,  USA.

 

47c. V. A. Gritsenko, , I. H. Wilson, J. B. Xu, Y. H. Ng, R.W. M. Kwok, Short  Order and Large Scale Potential Fluctuations in a-SiNx, Thesises of the MRS Conference “ Amorphous and Crystalline Insulating Thin Films II”, October 12-14, 1998, Hong Kong,

 

46c. Yu. N. Morokov, Yu.N. Novikov,   V. A. Gritsenko, J. B. Xu, I. H. Wilson, Electronic Structure of  Two-Fold Coordinated  Nitrogen Atom in Silicon  Nitride and Oxynitride,  Thesises of the MRS Conference “ Amorphous and Crystalline Insulating Thin Films II”, October 12-14, 1998, Hong Kong,

 

45c. V. A. Gritsenko,  J. B. Xu, I. H. Wilson, R.W. M. Kwok, Y. H. Ng,  Short Range Order and the Nature of Defects and Traps in Amorphous Silicon Oxinitride ,  Thesises of the MRS Conference “ Amorphous and Crystalline Insulating Thin Films II”, October 12-14, 1998, Hong Kong,

 

44c. V. A. Gritsenko, «Toward Atomic Scale Understanding of Defects and Traps in Oxide/Nitride/Oxide and Oxynitride Systems», in Proc. of NATO Advanced Research Workshop: Fundamental Aspects of Ultrathin Dielectrics on Si-based  Devices toward an Atomic Scale Understanding, p.335-342, High Technology

Vol.  47, 1998, Klumer Academic, Boston, USA.

 

43c. V. A. Gritsenko,   J. B. Xu, Two Band Transport in SONOS Structures, Excepted by  1998 IEEE Hong Kong Electron Devices Meeting,

42c. V. A. Gritsenko, K. S. Zhyravlev, A. D. Milov, and H. Wong, Photoluminescence  and ESR Properties of Silicon Nanoclusters in Silicon Nitride, Thesis’s of  IUMRS-ICA-97, Japan, September19-23, Japan.

 

41c. V.A. Gritsenko, Yu.N. Morokov, Yu.N. Novikov, I.P. Petrenko, S. N. Svitasheva,  R. Kwok, R. Chan, H. Wong, Characterization of the Silicon  Nitride  - Thermal  Oxide Interface in ONO Structures by ELS pectroscopy  and  Ellipsometry,  Pros. of the 21st International Conference on Microelectronics, Yugoslaviya, 15-17 September, 1997.

 

40c. V. A. Gritsenko, Atomic and Electronic Structure of Defects in Silicon       Nitride, Thesisis of 191st Meeting of the Electrochemical  Society, May 4-9,   1997,  Montreal, Canada.

 

39c. V.A. Gritsenko, Yu.N. Morokov, Valence Band Electronic Structure and      Charge Transport in Silicon Oxide and Silicon Nitride, Thesisis of the 191st   Meeting of the Electrochemical   Society, May 4-9, 1997,  Montreal, Canada.

 

38c. V.A. Gritsenko, E. E. Meerson, and Yu.N. Morokov, Vinjection of Holes and

Electrons at Al,Au-Si3N4 Interface and Energy Diagram of MNOS Structures, Thesisis of the 191st  Meeting of the Electrochemical Society, May 4-9, 1997,  Montreal, Canada.

 

37c. V. A. Gritsenko, Yu. N. Morokov, Yu. N. Novikov, I. P. Petrenko,

N.Svitasheva, and H. Wong,  Excess Silicon at Interface Silicon Nitride -  Thermal Oxide  Structures. Thesisis of the  191st Meeting of the Electrochemical Society, May 4-9, 1997,  Montreal, Canada.

 

36c.  V. A. Gritsenko, Yu. N. Morokov, Yu. N. Novikov, I. P. Petrenko, N.Svitasheva, and H. Wong, Enreaching of the Si3N4 -Thermal Oxide   Interface by Excess  Silicon in ONO structures,  Thesises of 10th Biennial  Conference «Insulating ­Films on Semiconductors»- INFOS’97, 1997, Goteborg, Sweden.

 

35c. V. A. Gritsenko, H. Wong, ESR Study of Electrons and Holes Localized in  Amorphous Si3N4,  Pros. 1-st ASIA-Pasific EPR/ESR Symposium,   pp. 132-139, 1997,  Springer -Verlag.

 

34c. V. A. Gritsenko, Yu. N. Morokov, Yu. N. Novikov, H. Wong, Y. C. Cheng,  Electronic Structure of Si-Si Bond in Si3N4 and SiO2: Experiment and Simulation by MINDO/3, Proc. of 1996 MRS Meeting, Vol. 446, p. 169-175,  Kluver Academic, London (1997).

 

33c.  V. A. Gritsenko, A. D. Milov, M. D. Efremov, V. A. Volodin, H. Wong, A. Pazdnikov,   K. S. Juravlev, Silicon Nanocluster in Silicon Nitride:  Photoluminescence, Raman Scattering and ESR Studies,  Pros. Conference  on Optoelectronic and Microelectronic Materials and Devices, December, 8-11, 1996,  pp. 85-92, Canberra, Australia.

 

32c.  V.A. Gritsenko, Yu.N. Morokov, Yu.N. Novikov, Electronic Structure of   Amorphous Si3N4: Experiment and Numerical Simulation,  Pros 8 Intern. Conf. on Solid Films and Surface, p.ThP-29, July 1-5, 1996,  Osaka, Japan.

 

31c.  V. A. Gritsenko, Yu. N. Morokov, Yu. N. Novikov, Numerical Simulation of  Si3N4 Electronic Structure and Comparison with Experiment, Pros. The Fifth International Conference on Simulation of Devices and Technologies, ICSDT'96, p.84-87, May 5-7, 1996, Obninsk, Russia.

 

30c. V. A. Gritsenko, Yu. N. Morokov, Electronic Structure of Amorphous  SiO2: X-Ray Emission, Photoelectron Spectroscopy, and Simulation by  MINDO/3, Pros. 3 Intern. Seminar on New Materials, Irkutsk, p.17, Jun.27-Jul.2, 1996, Russia.

 

29c. V. A. Gritsenko, Yu. N. Morokov, V. P. Bolotin, Electronic Structure of a-SiO2 and Si-Si Bond: X-ray Spectra and Numerical Simulation, Meeting Abstract, V.96-1, 159 Spring Meeting of Electrochemical , Society, p.348, May 5-10, 1995, Los Angeles, USA.

           

28c. V. A. Gritsenko, R. M. Ivanov, Yu. N. Morokov, Simulation of Hole  and Electrons Traps in Silicon Dioxide by MINDO/3, Pros. the  Fourth  International Seminar on Simulation of Devices and Technologies- ISSD'95, p.79-81, November, 15-17, 1995, Pretoria, South Africa.

 

27c. G. V. Gadiyak, V. A. Gritsenko, K. A. Nasyrov, Yu. A. Perchilo, Current-     Voltage Characteristic and Charge Accumulation in SiO2.  Pros, Intern    Conference on VLSI and CAD, p.17-20, November 15-17, 1993, Taejon, Korea.

 

26c. V. A. Gritsenko, Influence of Hydrogen on the Optical and Electrical   Properties of Silicon Nitride,  Pros. of Conf. "Amorphous Insulators  in Electronics", p.122-132,1989, Odessa, Ukraine, USSR.

 

25c. V. A. Gritsenko, Transport of Charge in MNOS Structures,  Pros. of  Conf. "Amorphous Insulators  in Electronics", p.8-15, 1989, Odessa, Ukraine, USSR.

 

24c. V. A. Gritsenko, Transport of Electrons and Holes in Amorphous Insulators    of MIS Structures, Pros. of  Conf."Physics of Dielectrics», p. 24-28, 1990,  Tomsk, Russia, USSR.

 

23c. V. A. Gritsenko, V. D. Fink, B. M. Muravskii, Hydrogen and Degradation of

MNOS EEPROM Cells,  Thesises of ­  Conf. "Designe of EEPROM Devices», 

1987, Kiev, Ukraine, USSR.

 

22c. Yu. V. Goltvjanskii, V. M. Stekanov,V. A. Gritsenko, A. S. Dubchak,  Degradation Processes in Floting Gate devices, Thesises of Conf. "Designe of EEPROM Devices»,  p.12. 1987, Kiev, Ukraine, USSR.

 

21c. V. P. Bolotin, V. A. Gritsenko, N.A. Romanov, Red Shift of Absorbtion Edge             and Conduction of SiNx, Proceedings Conference on the Nitrides: Productions     Methods, Properties and Application, p.53-55, June 4-7, 1984, Riga, Latvija.

 

20c. I. A. Britov, V. A. Gritsenko, E. A. Obolenskii,  Yu. N. Romaschenko,    Electronic Structure of Silicon Nitride of Different Composition, Proceedings         Conference on the Nitrides: Productions  Methods, Properties and Application,      p.56-58, June 4-7, 1984, Riga, Latvija, USSR.

 

19c. V. A. Gritsenko, Electronic Structure, Optical Properties and Transport of      Charge in Silicon Oxide and Nitride, Pros. 26 Intern. Colloquium, p.18-23,  1981, Ilmenau, Germany,.

 

18c. V. P. Popov, M. S. Suhov, V. A. Gritsenko, Tetrachloride Silicon Nitride as  Mask for LOCOS, Pros. Conf. «LPCVD Processes in Silicon Technology»,    

24, 1979, Novosibirsk, USSR.

 

17c. V. A. Gritsenko, V. D. Fink, V. P. Popov, B. M. Muravskii, LPCVD and APCVD Silicon Nitrides as Memory Medium in MNOS EEPROM, Pros.         Conf. «LPCVD Processes in Silicon Technology», p.13-15, 1979, Novosibirsk,  

USSR.

 

16c. V. A. Gritsenko, K. P. Mogilnikov, Electrons and Holes Photoemission  in Silicon MIS Structures, Pros. 23 Intern. Colloquium, p.5-8, 1978, Ilmenau, Germany.

 

15c. V. A. Gritsenko, K. P. Mogilnikov, Physical Processes at Internal    Photoemission, Pros. of the All-Union Conference on the Physical   Principals of MOS  Electronics, p.56-58, 1978, Kiev, Ukraine, USSR.

 

14c. V. A. Gritsenko, Transport of Charge in Amorphous Dielectrics of  MIS Sructures,. Pros. of the All-Union Conference on the Physical   Principals of  MIS  Electronics, p.16-21, 1978, Kiev, Ukraine, USSR.

 

13c.  A. V. Rhzanov, K. P. Mogilnikov, and V. A. Gritsenko, Transport of Electrons­ in  Silicon Oxinitride, Pros of the Conf. «The Physics of SiO2 and  its Interface», Ed. by S.T. Pantelides, p.40-45, 1978, Pergamon Press, New York, USA.

 

12c.  V. A. Gritsenko, K. P. Mogilnikov, Photoemission in MIS  Structures, Pros.  of the Conf. ''Physical Processes in MIS structures'', 1977, p.18-27, Novosibirsk,         USSR.

 

11c. V. A. Gritsenko, V. D. Fink, Injection and Capturing of Electrons in  MNOS   Structures, Pros. of the Conf. ''Physical Processes in MIS structures'', p.63-68, 1977,  Novosibirsk, USSR.

 

10c. V. A. Gritsenko, K. P. Mogilnikov, A. V. Rzhanov, Transport of Electrons  in   Silicon Oxinitride, Bull. of Amer. Phys. Sos.1977.

 

9c.  V. A. Gritsenko, S. P. Sinitsa, Electronic Spectra and Optical  Properties of   Amorphous Insulators of Different Composition,  Pros.7 Conference on   Electronic Processes  on the Semiconductors   Surfaces, p.23-29, 1977, Novosibirsk, USSR.

 

7c.  V. A. Gritsenko, Continues  Spectrum of  Frenkel Centers in Silicon  Nitride,     Pros. 20 Intern. Colloquium, p.127-130, 1975, Ilmenau, Germany.

 

6c.  V. A. Gritsenko, V. B. Zinovjev, N. B. Pridachin, N. V. Fedchenko, Conduction of Ion Implanted Silicon Nitride,  Pros. of IV Symposium on Electronic Processes on the Surface of  Semiconductors, p.34-37,­ 1974, Novosibirsk, USSR.

 

5c.  V. V. Voskoboinikov, V. A. Gritsenko, G. V. Grigorjev, V. E. Lesnicovskaja,        S. P. Sinitsa, F. L. Edelman,  Structure  and  Electrical  Properties of  Pirolytic  Boron   Nitride, Pros. of IV National  Symposium on Electronic  Processes on the  Surface of  Semiconductors, p.67-69, 1974, Novosibirsk, USSR.

 

4c.  V. A. Gritsenko, Kinetic of Noneqilibreum Processes Related With  Frenkel Effects,. Pros. of IV National  Symposium on Electronic  Processes on the Surface of  Semiconductors, p.97-99, 1974, Novosibirsk, USSR.

 

3c.  V. A. Gritsenko, S. P. Sinitsa, Conduction of Silicon, Germanium,  Boron Nitrides  Films, Pros. of IV National  Symposium on Electronic  Processes on the  Surface of  Semiconductors, p.15-21, 1974, Novosibirsk, USSR.

 

2c.  A. S. Ginovker, V. A. Gritsenko, S. P. Sinitsa, Electron and Hole  Current     Components in Amorphous Silicon Nitride, Pros. National  Conf. on Physics of Dielectrics, V.3, p.31, 1973, Leningrad, USSR.

 

1c.  A. S. Ginovker, V. A. Gritsenko, S. P. Sinitsa, Mechanism of Charge     Transport in MNOS structures, Tesises of the 4th  Conference on Electronic Phenomena on the Surface of Semiconductors, p.31, 1971, Kiev, Ukraine, USSR.